2019
DOI: 10.1088/1612-202x/ab1bd8
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Optical properties of Gd3+-doped ZnO:SiO2 thin films

Abstract: For the first time Gd3+-doped (0.4–0.9 mass.%) ZnO:SiO2 composite films were obtained using the sol-gel method. Optical properties of the films and their structures were studied by absorption and fluorescence spectroscopy and scanning electron microscopy (SEM). The obtained SEM images suggest that the surface morphology of the films does not change qualitatively. However, it was found that doping with Gd3+ ions leads to a significant increase in the ultraviolet luminescence (UVL) of ZnO in ZnO:SiO2 composite b… Show more

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Cited by 2 publications
(2 citation statements)
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“…The band gap energies (Eg) of the samples were determined by the derivative of the transmission coefficient (T) with respect to the energy, dT/dE, taking into account the fact that ZnO is a direct-gap semiconductor. The band gap Eg of undoped and doped La 3+ thin ZnO films is shown in figure 2(A is 3.45 eV, which is in good agreement with the literature [30,31]. In all doped films, the optical band gap increases and amounts to 3.830-3.853 eV.…”
Section: Resultssupporting
confidence: 86%
“…The band gap energies (Eg) of the samples were determined by the derivative of the transmission coefficient (T) with respect to the energy, dT/dE, taking into account the fact that ZnO is a direct-gap semiconductor. The band gap Eg of undoped and doped La 3+ thin ZnO films is shown in figure 2(A is 3.45 eV, which is in good agreement with the literature [30,31]. In all doped films, the optical band gap increases and amounts to 3.830-3.853 eV.…”
Section: Resultssupporting
confidence: 86%
“…Tb 3+ :ZnO:SiO 2 composite films were synthesized by the solgel method [27]. Tb 3+ content varied 0.5; 1; 3; 5% mol.…”
Section: Methodsmentioning
confidence: 99%