Optical properties of Ge-Sb-Se thin films induced by femtosecond laser

Pan, Lei; Song, Baoan; Mao, Ning; Xiao, Chuanfu; Lin, Changgui; Zhang, Peiqing; Shen, Xiang; Dai, Shixun

doi:10.1016/j.optcom.2021.127123

Cited by 10 publications

(6 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where a 0 is a constant and E u is the width of localized tail states which represents the degree of disorder in the noncrystalline material. [32] hν decreases as the wavelength broadens, so α decreases as the wavelength broadens.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

et al. 2023

Self Cite

View full text Add to dashboard Cite

Antimony selenide (Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg-Marquardt method and Spectral Fitting Method (LM-SFM) is presented to study the dependence of refractive index (RI), absorption coefficient, optical band gap, Wemple-DiDomenico parameters, dielectric constant and optical electronegativity of Sb2Se3 films on their thickness. The results show that the RI and absorption coefficient of Sb2Se3 films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness is explained by XRD, EDS, Mott-Davis state density model and Raman microstructure analysis.

show abstract

Section: Resultsmentioning

confidence: 99%

“…The refractive index depends on the density and the average polarizability of the film. As described by the Lorentz-Lorenz equation [32,33]…”

Section: Structure Analysis Of Sb 2 Se 3 Thin Filmsmentioning

confidence: 99%

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…13 The Ge-Sb-Se film-based IR motherboard has been fabricated by using femtosecond laser micromachining, which showed an impactful reduction in the refractive index and E g , while an increment in the absorption coefficient has been observed with laser power variation. 14 The laser irradiation effect on As 40 Se 55 Bi 5 thin films having lasing energy equal to band energy showed structural alteration along with the PD effect because of the change in the defect states over the band regime. 15 Thus, this study mainly focused on laser irradiation that induced various material properties with different exposure times.…”

Section: Introductionmentioning

confidence: 94%

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Priyadarshini¹,

Parida²,

Alagarasan

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

The current research depicts the laser irradiation-induced effect on the optoelectrical and structural properties of thermally evaporated Bi15In20Se65 thin films with different exposure durations (0, 10, 20, 30, 60, and 90 min). The illumination effect under different lasing times leads to the retention of amorphous nature, indicating the short-range ordering inside the matrix. An improvement in the homogeneous and smooth texture of the film surface even after irradiation has been observed. However, significant optical changes have been noticed with different exposure durations. Transparency decreased with the exposure time, whereas an increment in the absorption coefficient with red shifting in the absorption edge was observed. Broad transparency and less absorption over the infrared region make these films promising for infrared optics such as temperature detection, energy management, monitoring, night vision, etc. Laser illumination allowed bond rearrangements that led to an increase in defect states over the forbidden gap regime and reduced the bandgap from 1.02 to 0.94 eV, confirming the photodarkening nature. This consequently enhanced the Urbach energy and electron–phonon interactions. Both extinction coefficient and refractive index enhanced with lasing duration, indicating an increment in the scattering centers with the lasing duration. The increase in the lasing time results in the increase of interband transitions, which might be due to the increase of carrier concentrations in the system. The non-linear susceptibility (χ(3)) and refractive indices showed enhancement with exposure duration. The observed non-linear refractive index (SI) is 20–30 times greater than silica. This reduction of Eg and enhancement in non-linearity improves the occurrence of two-photon absorption, signifying the potentiality for photonic devices. The hydrophilic nature of laser-irradiated films makes them suitable for applications such as self-cleaning, antifouling, and antifogging as coating materials.

show abstract

“…Nowadays, the response of materials to intense external energy inputs such as thermal annealing, 1,2 laser irradiation, 3,4 ion irradiation, 5,6 and doping 7,8 to achieve the desired characteristics for fundamental studies and technological applications is gaining much attention. Among them, ion irradiation is one of the distinctive external energy input techniques that improve the structural and optical properties together with modification of the microstructural patterns of the system.…”

Section: Introductionmentioning

confidence: 99%

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi₅In₃₀Se₆₅ thin films for nonlinear optical devices

Priyadarshini¹,

Das²,

Alagarasan

et al. 2022

RSC Adv.

View full text Add to dashboard Cite

show abstract

Optical properties of Ge-Sb-Se thin films induced by femtosecond laser

Cited by 10 publications

References 36 publications

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi₅In₃₀Se₆₅ thin films for nonlinear optical devices

Contact Info

Product

Resources

About

Optical properties of Ge-Sb-Se thin films induced by femtosecond laser

Cited by 10 publications

References 36 publications

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi5In30Se65 thin films for nonlinear optical devices

Contact Info

Product

Resources

About

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi₅In₃₀Se₆₅ thin films for nonlinear optical devices