Optical properties of glasses (TeO2–GeO2–K2O) thin films co-doped with rare earth oxides Sm2O3/Yb2O3

El-Hagary, M.; Emam-Ismail, M.; Shaaban, E.R.; Shaltout, I.

doi:10.1016/j.jallcom.2009.06.016

Cited by 30 publications

(11 citation statements)

References 26 publications

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“…During deposition process, the film thickness and the rate of evaporation were monitored using quartz crystal monitor attached to the vacuum system. Finally, the thicknesses of the deposited films were independently checked using F20 profile meter set up [20][21][22].…”

Section: Preparation Of the Bulk Materialsmentioning

confidence: 99%

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

Emam-Ismail

El-Hagary

Shaaban

et al. 2012

Journal of Alloys and Compounds

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Section: Preparation Of the Bulk Materialsmentioning

confidence: 99%

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

Emam-Ismail

El-Hagary

Shaaban

et al. 2012

Journal of Alloys and Compounds

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“…8 shows the wavelength spectra of T and R. The transmittance is found to be decreased with increasing the film thickness particularly in the NIR region. In the near-infrared region, due to the large number of free electrons in the film, the interaction been clearly seen in references [35][36][37]. The data was acquired at a 70° incident angle.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Woollam, M-2000). All the details of this method have been clearly seen in references [35][36][37]. The data was acquired at a 70° incident angle.…”

Section: Optical Propertiesmentioning

confidence: 99%

Structure, Electrical and Optical Properties of ITO Thin Films and Their influence on Performance of CdS/CdTe Thin-Film Solar Cells

Ahmed

Bakry

Shaaban

et al. 2021

Preprint

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ITO was prepared by mixing gradient In2O3 and SnO2 powders using solid phase reaction manner. Using electron beam gun tool, ITO films with varied thicknesses were fabricated. The structure, electrical and optical parameters of the prepared films were studied. XRD patterns were used to establish the micro-structural parameters (lattice strain and crystallite size). The SEM shows improvement of grain size with the increase of the film thickness. The electrical parameters of ITO films were measured by means of the standard four-point probe method. It was found that when the film thickness increases from 75 nm to 375 nm, the resistivity decreases to lower value of 1.65×10-4 Ω.cm and slightly increases to 1.93 ×10-4 Ω.cm at thickness of 375 nm. The ITO films with lower electrical properties are appropriate for high-efficiency CdTe solar cells. In terms of spectral ellipsomeric, three optical layer models (adhesive layer of the substrate/B-spline layer of ITO film/surface roughness layer) were applied to estimate the film thickness with high accuracy. The absorption coefficient and energy gap were calculated from the transmission and reflection spectra in the strong absorption region. As the film thickness increases, the optical energy gap was found to increase from 3.56 eV to 3.69 eV. In terms of Hall-effect measurements, both carrier concentration and hall mobility were determined. In addition, influences of ITO layers with various thicknesses on the performance of CdS/CdTe solar cells were checked. When the ITO window layer thickness is 325 nm, Jsc = 17 mA/cm2, Voc = 0.82 V, and FF = 57.4%, the calculated highest power conversion efficiency (PCE) is 8.6%.

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“…This method is based on the suppression of the observed interference patterns in the transmittance spectra by constructing envelope curves around maxima and minima transmittance. The detailed process of this method has been described elsewhere [47,48]. The envelope of Cu doped CdTe:10 film is displayed in Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

Alzaid

Hadia

El-Hagary

et al. 2021

Preprint

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This paper reports the microstrcure, optical and electrical characteristics of undoped and Cu doped CdTe nanostructured thin films prepared on glass substrates by electron beam evaporation technique. The Crystallographic study of X-ray diffraction shows that CdTe and Cu doped CdTe films crystallize in the form of a cubic zinc blende structure. Microstructure analysis reveals that as the Cu doping level increases, the average crystallite size increases, while the microstrian decreases due to the improvement of the crystallinty, thereby reducing defects. XRD and AFM investigations confirmed the nanostructure characteristic of undoped and Cu doped films. It was found that the optical band gap energy increases from 1.485 eV to 1.683 eV as the Cu concentration increases from 0 wt. % to 10 wt. %, which may be related to the Burstein-Moss effect. The refractive index is calculated from the Swanepoel envelope method and found to decrease with the increase of the Cu doping due to the decrease in the prolizability. Similarly, the extinction coefficient decreases with the increase of Cu in CdTe matrix. The dc electrical conductivity is found to increase with increasing Cu doping, which is attributed to the increase in the grain size, thereby reducing the scattering of the grain boundary. Furthermore, two conduction mechanisms of the carrier transport in nanostrcutured undoped and Cu doped CdTe films were observed. The low temperature dependence of the conductivity of undoped and Cu doped CdTe nanostructured films is explained based on Mott’s variable range hopping conduction mechanism model (VRH). Interestingly, the calculated values of hopping distance R, the hopping energy W and the the density of states at the Fermi level N(EF) are consistent with the Mott's VRH. Finally, Hall effect measurements show that all the films have p- type conduction behavior. Besides, the results show that as Cu doping level increases, the carrier concentration and the Hall mobility increase due to the decrease in grain boundary scattering with the increase in grain size. Accordingly, it can be concluded that by increasing the Cu doping level in the CdTe film, the conductivity is increased, thereby improving the performance of the CdTe absorber layer in the solar cell structure.

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Optical properties of glasses (TeO2–GeO2–K2O) thin films co-doped with rare earth oxides Sm2O3/Yb2O3

Cited by 30 publications

References 26 publications

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

Structure, Electrical and Optical Properties of ITO Thin Films and Their influence on Performance of CdS/CdTe Thin-Film Solar Cells

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

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