Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eV

Jellison, G. E.; Modine, F. A.; White, C. W.; Wood, R. F.; Young, R. T.

doi:10.1103/physrevlett.46.1414

Cited by 93 publications

(45 citation statements)

References 10 publications

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“…17 The absorption depths are 820 nm and 120 nm for c-Si, 18 and 30 nm and 15 nm for a-Si, for 514-nm and 415-nm photons, respectively. 19 To minimize signals from the unimplanted Si region below the implanted volumes, 405-nm photons were used in most measurements.…”

Section: Methodsmentioning

confidence: 99%

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Balasubramanian

Hull

2016

Journal of Elec Materi

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The ion current density in focused ion beam (FIB) systems, 0.1-10 A cm À2 , is at least three orders of magnitude greater than that in commercial broad ion beam implanters. This large difference in ion current density is expected to strongly affect the damage recovery dynamics. In this work, we study the ion implantation damage and recovery of Si(100) substrates implanted with 1 9 10 12 -5 9 10 15 Si cm À2 fluences of 60-keV Si 2+ at normal incidence in a mass-selecting FIB. Additionally, damage and recovery in different broad ion beam implants of 60-keV Si + were studied for a comparison. For recovering implantation damage, specimens were annealed for different times at 730-900°C in an ultra-high purity nitrogen ambient, and for characterizing damage and recovery, Raman spectroscopy at wavelengths 405 nm and 514 nm was carried out. Raman measurements comprised of measurements of crystalline Si (c-Si) peak height of the peak at 520 cm À1 , and the peak shift relative to that of un-implanted reference Si. Our measurements of structural damage-calculated from the attenuation in the c-Si peak heights for the implants relative to that of unimplanted Si(100)-indicates that the FIB implantations lead to a greater as-implanted damage but also typically lead to a better recovery than that for the commercial broad-area implants. The underlying mechanisms for these observations are discussed.

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Section: Methodsmentioning

confidence: 99%

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Balasubramanian

Hull

2016

Journal of Elec Materi

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“…The two lasers were used for probing different depths in the substrates. The penetration depths of photons of wavelengths 514 and 405 nm in crystalline Si (unimplanted Si), which were calculated from the absorption coefficients for these wavelength photons in Si [13] are 818 and 125 nm. In amorphous Si the absorption depths of 514 and 405 nm wavelength photons are approximately 30 and 15 nm respectively [14].…”

Section: Methodsmentioning

confidence: 99%

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Balasubramanian

Hull

2015

J Mater Sci: Mater Electron

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Focused ion beam (FIB) techniques have previously been shown to have applications in templating semiconductor nanostructure growth on Si. To assess crystalline quality in this method, or in other FIB-based nano-fabrication methods in Si, we assess in this work FIBimplantation damage in Si and subsequent recovery by annealing. Specifically, we study Si substrates implanted to 1 9 10 12 -5 9 10 15 ions cm -2 fluences of 30 kV Si 2? , Ge 2? and Ga ? incident normally at room temperature, covering a structural damage regime from almost no damage to amorphization. Raman spectroscopy with incident photons of wavelength 405 and 514 nm were used for probing structural damage in different depths in as-implanted and thermally annealed substrates. Annealing was performed for varying times at 730-900°C in ultra-high purity nitrogen ambient. Structural damage quantification was performed through measurements of peak height and position of the crystalline Si peak at 520 cm -1 . Our analysis shows that a structural damage parameter, D, (defined by subtracting from unity, the ratio of the height of the Si Raman peak in implanted/annealed samples to that for the Si peak in an unimplanted standard, such that D = 0.00 and D = 1.00 correspond to pristine single crystal and amorphous Si respectively) is 0.05 or less in all the Si and Ge implants after annealing to 900°C, 1800 s. However, D for the Ga implants is close to zero for Ga fluences up to 3 9 10 13 cm -2 but increases steadily to 0.19 for 5 9 10 15 Ga cm -2 under these annealing conditions. The underlying damage recovery mechanisms are discussed.

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“…The first is by changing the optical properties. Jellison et al 47 have measured the optical properties of heavily doped silicon ͑0.6 at. % in the near surface region for samples implanted with boron, around 1.0% for samples implanted with arsenic͒ and find that doping has a small effect for 308 nm radiation.…”

Section: Solidification Velocitymentioning

confidence: 99%

Experimental test of morphological stability theory for a planar interface during rapid solidification

1998

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The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters We report a parameter-free test of the theory predicting the critical solute concentration that destabilizes a planar solid-liquid interface in the high-velocity regime where nonequilibrium interface kinetics are important. Rapid solidification following pulsed laser melting was used to make metastable solid solutions of silicon-tin. Rutherford backscattering spectrometry and transmission electron microscopy were used to measure the breakdown concentration. Samples remained microsegregation free with near perfect crystallinity at tin concentrations up to 10 times the maximum equilibrium solubility and 100 times that predicted by linear stability theory with local interfacial equilibrium. These measurements, covering velocities from 1 to 10 m/s, agree with the predictions of linear stability theory when the latter incorporates a velocity-dependent partition coefficient and a thermodynamically consistent kinetic liquidus, and contains no adjustable parameters. We also report a systematic increase of the breakdown concentration with increasing deviation from steady-state conditions, which is not addressed by current stability theories, parametrized by the concentration gradient just prior to breakdown. ͓S0163-1829͑98͒07117-3͔

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Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eV

Cited by 93 publications

References 10 publications

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Experimental test of morphological stability theory for a planar interface during rapid solidification

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