New complexes MoO2(tBuAMD)2 (1) and WO2(tBuAMD)2 (2) (AMD = acetamidinato)
are synthesized and fully characterized
as precursors for atomic layer deposition (ALD). They contain metal-oxo
functionalities not previously utilized in ALD-type growth processes
and are fully characterized by 1H and 13C NMR,
X-ray diffraction (XRD), Fourier transform infrared, thermogravimetric
analysis, single-crystal XRD, and elemental analysis. Guided by quartz-crystal
microbalance studies, ALD growth methodologies for both complexes
have been developed. Remarkably, these isostructural compounds exhibit
dramatic differences in ALD properties. Using 1 and O3, amorphous, ultrathin molybdenum oxynitride (MoON) films
are grown on Si(100) wafers. Using 2 and H2O yields amorphous WO3 films on Si(100) wafers that crystallize
as WO3 nanowires upon annealing. Although 1/H2O and 2/O3 growth was attempted,
effective ALD growth could only be obtained with 1/O3 and 2/H2O, underscoring reactivity
differences in these precursors. Film thicknesses, compositions, and
optical and electrical parameters are characterized by variable angle
spectroscopic ellipsometry, X-ray reflectivity, grazing incidence
X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron
spectroscopy, and atomic force microscopy techniques. The hitherto
unknown ALD chemistry of group VI metal-oxo compounds lays a foundation
for their use in the ALD synthesis of heterogeneous catalysts.