2018
DOI: 10.1109/jstqe.2017.2701554
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Optical Properties of Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Optical Pixel Sensor in Three Primary Colors

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Cited by 10 publications
(4 citation statements)
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“…Transfer I-V characteristics of photo sensor at 532 nm illumination for a bias voltage Vds = 15 V capacitor can be further transferred to an external charge amplifier, and the position of the sensor that receives the optical input signal will thus be identified. [4] Fig. 2 shows the representative transfer characteristics of photo-TFT.…”
Section: Photo Sensormentioning
confidence: 99%
“…Transfer I-V characteristics of photo sensor at 532 nm illumination for a bias voltage Vds = 15 V capacitor can be further transferred to an external charge amplifier, and the position of the sensor that receives the optical input signal will thus be identified. [4] Fig. 2 shows the representative transfer characteristics of photo-TFT.…”
Section: Photo Sensormentioning
confidence: 99%
“…However, the intensity of ambient light would also affect the output of photo sensor and leading to a low signal-to-noise ratio (SNR) [5]. Hence, recent studies proposed a new photo sensor circuit by Lin et al [6,7,8] by combining a-Si:H TFTs and R, G, B color filters to against ambient illumination. In this work, the proposed sensor circuit is integrated in the display area of a 15-inch XGA TFT-LCD as a sensor matrix of 113(×3)×256 to verify the feasibility of in-cell optical touch function.…”
Section: Objective and Backgroundmentioning
confidence: 99%
“…The peak wavelength of the blue LED that is used in this work is 470 nm. The optical transmission rates of color filters under illumination by the light with various wavelengths was investigated in our previous work [16]. Fig.…”
Section: Device Characteristicsmentioning
confidence: 99%