Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Muzioł, G.; Hajdel, Mateusz; Siekacz, M.; Nowakowski-Szkudlarek, Krzesimir; Stanczyk, Szymon; Turski, Henryk; Skierbiszewski, C.

doi:10.7567/1882-0786/ab250e

Cited by 19 publications

(12 citation statements)

References 48 publications

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“…4 (c), which can be directly compared with the threshold carrier concentration (nth) for laser structures of the same losses on mirrors etc. This observation is in agreement with the recent experimental study for GaInN LDs [51], where lower ntr was observed for wider QWs. In general, this is a very interesting observation, which can strongly motivate growers to use wide QWs as the active region in LDs.…”

Section: Aln Capsupporting

confidence: 93%

“…GaAs-, InP-, and GaSb-based LDs [46][47][48][49]) are almost unexplored since it is usually assumed that such QWs will be worse for LDs applications that 3-6 nm wide QWs. However, it has recently been shown that wide GaInN QWs show unexpectedly strong photoluminescence under high excitation conditions [50] and LDs with such QWs work very well [51]. Therefore, it is a very interesting issue to carefully study material gain for GaInN and AlGaN over a wide range of widths.…”

Section: Introductionmentioning

confidence: 99%

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Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the ‘Dead’ Width for Light Emitters in These QW Systems?

Gładysiewicz

Skierbiszewski

Kudrawiec

2022

IEEE J. Select. Topics Quantum Electron.

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Abstract-Polar GaInN and AlGaN quantum wells (QWs) are widely used in light emitting diodes and laser diodes (LDs). However, the widths of such QWs are usually limited to a few nanometers in order to ensure a sufficiently large overlap between the wave functions of the ground electron and the ground hole state. By increasing the QW width we enter the area of 'dead' width where, the overlap of the electron and hole wave functions decreases almost to zero and the luminescence efficiency drastically deteriorates. Therefore, it is assumed that wide QWs are not suitable for light emitters and very wide (8-15 nm) QWs are not considered as a promising gain medium for LDs. Hence such QWs are very rarely studied both experimentally and theoretically. In this work the material gain is calculated for Ga0.8In0.2N/GaN and Al0.8Ga0.2N/AlN QWs with a width varying in the range of 2-15 nm. We observed that the material gain at fixed carrier concentration for these QWs drops to zero with the increase in the QW width and reaches negative values in the width range of ~4-8 nm even for high carrier concentrations, but after exceeding a certain width to ~8-12 nm it begins to increase rapidly and reaches the values greater than those observed for narrow QWs. This phenomenon is related to the screening of the built-in electric field by carriers, which is easier for wide QWs, and the reduction of the distance between the energy levels for electrons and holes. For the latter reason, optical transitions between higher energy states make a very significant contribution to the positive material gain Index Terms-material gain, modeling, quantum wells, III-N

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Section: Aln Capsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the ‘Dead’ Width for Light Emitters in These QW Systems?

Gładysiewicz

Skierbiszewski

Kudrawiec

2022

IEEE J. Select. Topics Quantum Electron.

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“…We showed that the reason behind the high efficiency of the wide QWs lays in the screening of the built-in electric field by carriers occupying the ground states and radiative transition through exited states with high wavefunction overlap [ 30 ]. Additionally, we reported on the utilization of wide InGaN QWs for laser diodes [ 31 ]. Brecha et al showed that the piezoelectric polarization is present without excitation, even in QWs as thick as 25 nm [ 32 ].…”

Section: Introductionmentioning

confidence: 99%

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

et al. 2021

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The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one.

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“…LD structure is presented in upper waveguides are undoped In 0.08 Ga 0.92 N layers with thickness of 80 nm and 60 nm, respectively. The active region is a 25 nm thick In 0.17 Ga 0.83 N quantum well [15]. At the end of the InGaN waveguide the EBL consisting of Al 0.13 Ga 0.85 N:Mg is placed.…”

Section: Methodsmentioning

confidence: 99%

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2019

Acta Phys. Pol. A

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We investigate influence of Mg doping concentration and the thickness of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy. Using simple measurements of light-current characteristics and simulations, two main conclusions are drawn. First one-the Mg dopant is responsible for optical losses, as in the case of the laser diodes grown by metalorganic vapor phase epitaxy. Second one-the low Mg doping causes electrons to overflow through electron blocking layer. Additionally, tunneling is proposed as an escape mechanism of carriers from active region for thin electron blocking layer.

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Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Cited by 19 publications

References 48 publications

Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the ‘Dead’ Width for Light Emitters in These QW Systems?

Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the ‘Dead’ Width for Light Emitters in These QW Systems?

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

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