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Kitchin, Matthew; Shaw, Michael J.; Corbin, E.; Hagon, J. P.; Jaroš, M.

doi:10.1103/physrevb.61.8375

Cited by 27 publications

(14 citation statements)

References 31 publications

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“…The reluctance of manufacturers to take on board these systems for applications may lie in the incomplete understanding of their fundamental physics, for example, regarding lifetimes. 17 In a previous study, 18 our results suggested that the microscopic characteristics of alloy layers in heterostructures can have a large effect on their optical properties. 16 To improve the characterization and understanding of these systems, knowledge of the physics linking such disorder and interface distortion with lifetimes and the optical properties is required.…”

Section: Introductionsupporting

confidence: 61%

“…As has been addressed in previous publications, 18,30 when, as in the present systems, an alloy layer forms part of the key interface for transitions, the microscopic detail of this layer can have a large effect on the optical properties. In an attempt to investigate these effects, various alloy layer models have been used when calculating the band structure and optical spectra of these systems.…”

Section: Resultsmentioning

confidence: 63%

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Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Kitchin

Shaw

Hagon

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A large scale investigation into the effects of alloy layer disorder on emission in antimonide-based superlattices is reported. The potential utility of these systems in infrared ͑IR͒ optoelectronic technologies is reviewed and issues inhibiting their realization identified. The Ga 0.7 In 0.3 Sb alloy layer is modeled using both the conventional virtual crystal approximation and models which describe microscopic disorder, clustering, and atomistic relaxation. The structures have recently been fabricated for IR laser applications and we investigate the influence of the alloy description on the emission line shapes. For each superlattice we find that the emission linewidth and peak height is very sensitive to the microscopic details of the alloy potential. Comparing the various superlattice systems, which differ regarding the InAs layer widths, we find that their linewidth values ͑eV͒ are each of the same order of magnitude for a given population of excited carriers. While values show a strong dependence on the period, reflecting large differences in the interband transition probabilities, the relationship between linewidth and excited carrier population does not show a clear correlation with superlattice period. This article demonstrates quantitative links between microscopic disorder and the optical properties of strained-layer superlattices.

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Section: Introductionsupporting

confidence: 61%

Section: Resultsmentioning

confidence: 63%

Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Kitchin

Shaw

Hagon

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[1][2][3][4][5] Substantial progress has been made in using nanostructured materials such as silicon nanowires (SiNWs) to increase the efficiency of energy conversion. [6][7][8][9][10][11][12][13] In addition, silicon-germanium (Si 1Àx Ge x ) alloys have been used for power generation due to their stability and efficiency at high temperatures.…”

mentioning

confidence: 99%

Phonon mean free path spectrum and thermal conductivity for Si1−xGex nanowires

Xie

Guo

Wei

et al. 2014

Applied Physics Letters

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We reformulate the linearized phonon Boltzmann transport equation by incorporating the direction-dependent phonon-boundary scattering, and based on this equation, we study the thermal conductivity of Si 1Àx Ge x nanowires and derive their phonon mean free path spectrum. Due to the severe suppression of high-frequency phonons by alloy scattering, the low frequency phonons in Si 1Àx Ge x nanowires have a much higher contribution to the thermal conductivity than pure silicon nanowires. We also find that Si 1Àx Ge x nanowires possess a stronger length-dependent, weaker diameter-dependent, and weaker surface roughness-dependent thermal conductivity than silicon nanowires. These findings are potentially useful for engineering Si 1Àx Ge x nanowires for thermoelectric applications. V C 2014 AIP Publishing LLC. [http://dx.

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“…Semiconductor superlattices (SL) are of great interest due to their potential applications in thermoelectric and optoelectronic devices [1,2]. Superlattice structures provide the possibility of decreasing materials' thermal conductivity while retaining their electrical conductivity, thus achieving a high thermoelectric figure-of-merit and improving the performance of thermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics study of the lattice thermal conductivity of Kr/Ar superlattice nanowires

Chen

Yang

et al. 2004

Physica B: Condensed Matter

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The nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity. Results show that interface scattering poses significant resistance to phonon transport in superlattices and superlattice nanowires. The thermal conductivity of the Kr/Ar superlattice nanowire is only about 1/3 of that for pure Ar nanowires with the same cross sectional area and total length due to the additional interfacial thermal resistance. It is found that nanowire boundary scattering provides significant resistance to phonon transport. As the cross sectional area increases, the nanowire boundary scattering decreases, which leads to increased nanowire thermal conductivity. The ratio of the interfacial thermal resistance to the total effective thermal resistance increases from 30% for the superlattice nanowire to 42% for the superlattice film. Period length is another important factor affecting the effective thermal conductivity of the nanostructures. Increasing the period length will lead to increased acoustic mismatch between the adjacent layers, and hence increased interfacial thermal resistance. However, if the total length of the superlattice nanowire is fixed, reducing the period length will lead to decreased effective thermal conductivity due to the increased number of interfaces. Finally, it is found that the interfacial thermal resistance decreases as the reference temperature increases, which might be due to the inelastic interface scattering. AbstractThe nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity.Results show that interface scattering poses significant resistance to phonon transport in a yunfeichen@yahoo.com 2 superlattices and superlattice nanowires. The thermal conductivity of the Kr/Ar superlattice nanowire is only about 1/3 of that for pure Ar nanowires with the same cross sectional area and total length due to the additional interfacial thermal resistance. It is found that nanowire boundary scattering provides significant resistance to phonon transport. As the cross sectional area increases, the nanowire boundary scattering decreases, which leads to increased nanowire thermal conductivity. The ratio of the interfacial thermal resistance to the total effective thermal resistance increases from 30% for the superlattice nanowire to 42% for the superlattice film.Period length is another important factor affecting the effective thermal conductivity of the nanostructures. Increasing the period length will lead to increased acoustic mismatch between the adjacent layers, and hence increased interfacial thermal resistance. However, if the total length of the superlattice nanowire is fixed, reducing the p...

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Optical properties of imperfect strained-layerInAs/Ga1−xInx

Cited by 27 publications

References 31 publications

Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Phonon mean free path spectrum and thermal conductivity for Si1−xGex nanowires

Molecular dynamics study of the lattice thermal conductivity of Kr/Ar superlattice nanowires

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