Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics 2008
DOI: 10.1016/b978-0-08-046325-4.00003-7
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Optical Properties of In(Ga)As/GaAs Quantum Dots for Optoelectronic Devices

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Cited by 3 publications
(3 citation statements)
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“…In the case of QDs and QRs, the technological parameters were different. In both cases growth was tracked continuously by RHEED (in the direction of [1][2][3][4][5][6][7][8][9][10]). After the growth, these grown structures were investigated with atomic force microscopy as well.…”
Section: Experimental Preliminariesmentioning
confidence: 99%
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“…In the case of QDs and QRs, the technological parameters were different. In both cases growth was tracked continuously by RHEED (in the direction of [1][2][3][4][5][6][7][8][9][10]). After the growth, these grown structures were investigated with atomic force microscopy as well.…”
Section: Experimental Preliminariesmentioning
confidence: 99%
“…It is enough to think of the single-electron transistor [1]. The application of nano-structures has drastically increased the performance of the traditional devices, like in the case of lasers [2]. Nano-structures have also boosted the efficiency of solar cells [3].…”
Section: Introductionmentioning
confidence: 99%
“…Figure 4-16: Illustration of the principle of (a) top-view scanning tunneling microscopy (usual STM technique) and (b) cross-sectional scanning tunneling microscopy[140]. To image semiconductors successfully at the atomic scale, both techniques must be operated in ultra-high vacuum.…”
mentioning
confidence: 99%