Optical properties of In2S3:Co2+ single crystals

Abstract

2 + single crystals were grown by the chemical transport reaction method. The optical absorption and photoconductivity measurements carried out at the temperature region 20--300 K and the photoacoustic spectrum was done at 292 K. The results showed that the structural defects of the p. In 2S 3 single crystal decreased as cobalt was introduced into the samples and that the cobalt atoms were located at the Td symmetry site of the /3' In 2 S 3 host lattice as Co 2 + ion.

Growth and characterization of near-band-edge transitions in β-In2S3 single crystals

“…The obtained values of lattice parameters are a¼7.610Å and c¼ 32.331Å, respectively. The values of lattice constants are comparable with those of the previously reported data [13]. Fig.…”

“…For spinel defect semiconductor, the experimental understanding on the band-edge nature of b-In 2 S 3 remains undetermined to date. Miscellaneous values of direct band gap ranging from 1.9 to 2.75 eV for claiming direct semiconducting behavior of b-In 2 S 3 were reported [2,7,9,10]; however, a lot of results claimed that b-In 2 S 3 is an indirect semiconductor with the indirect gaps ranging from 1.98 to 2.2 eV [11][12][13][14]. The discrepancy in the band-gap analysis may come from most of the experimental results were done on physically or chemically deposited thin films, different crystalline state (amorphous or polycrystalline), contamination, and crystal quality may be a factor for determining the band gap of b-In 2 S 3 .…”

Band‐Edge Electronic Structure of β‐In2S3: The Role of s or p Orbitals of Atoms at Different Lattice Positions

“…[7,[18][19][20][21] However, other researchers considered that it belongs to the indirect band gap semiconductors with an indirect band gap ranging from 1.98 to 2.2 eV. [22][23][24][25][26] In these studies, the nature of band gaps (b-In 2 S 3 considered as an indirect band gap semiconductor) calculated by density functional theory was consistent. The following two reasons may explain the inconsistency of the experimental measurements.…”

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

“…4,5 It is intrinsically an n-type 6,7 semiconductor. Its band gap is reported to be between 1.9 and 3.3 eV, with most reported values in the vicinity of 2.0 eV, 1,12,15 but there is still controversy on whether it is a direct 8,9 or indirect 10,11 band gap material. Besides its promising optoelectronic characteristics, from an environmental point of view, it is free of highly toxic heavy metals, unlike CdS, CdSe, and CdTe, which are popular in solar cell applications.…”