Optical properties of InAs/GaAs quantum dot superlattice structures

Alam, Imran; Jiang, Jianliang; Eric, Deborah; Zahid, Muhammad; Yousaf, Muhammad; Shah, Zaheer Hussain

doi:10.1016/j.rinp.2018.02.016

Cited by 24 publications

(11 citation statements)

References 48 publications

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“…4the open circuit voltage and fill factor are calculated in Eqs. (15) and (16). Table 2 shows the optimized proposed cell model with EBL and HBL layers and base cells without EBL and HBL layers.…”

Section: / 1 (13)mentioning

confidence: 96%

“…Fig. 4b shows the highest efficiency occurred by adding an EBL layer to a base cell at a doping of 2×10 15 1/cm 3 . Figs.…”

Section: Optimization Of Thickness and Doping In The Ebl And Hbl Layermentioning

confidence: 99%

“…An analytical study on InAs/GaAs quantum dots solar cells was conducted in 2017 by Sayantan et al [14]. In 2018, they conducted studies on the optical properties of InAs/GaAs quantum dots cells [15]. The effects of temperature on InAs/GaAs quantum dots were investigated by Abdelkader et al in 2019 [16].…”

Section: Introductionmentioning

confidence: 99%

“…In the present article, we used the EBL and HBL layer, which is similar in performance to BSF, and improved it via semiconductor In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P .The efficiency of the solar cell of the addition of the In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P semiconductor as the EBL and HBL layers is examined. The EBL layer (0.05 μm in thickness; doping 2×10 15 1/cm 3 ) and the HBL layer (2.0 μm in thickness; doping of 2×10 19 1/cm 3 ) increased solar cell efficiency 44.65%.…”

Section: Introductionmentioning

confidence: 99%

“…) Different values of the EBL doping (thickness = 0.005(μm)), b) Different values of the EBL thickness (doping = 5×1015 ( 1/cm 3 )) , ) Different values of the HBL doping (thickness = 0.005(μm )), b) Different values of the HBL thickness (doping = 5×10…”

mentioning

confidence: 99%

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Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Abbasian

Sabbaghi‐Nadooshan

2020

FACTA U EE

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In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs intermediate layer is simulated in Silvaco Atlas TCAD software. In order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (EBLs) and hole blocking layers (HBLs) have been added to the solar cell in an In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor. The results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the EBL and HBL layers. It can be concluded that the use of the In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor with EBL and HBL layers decreases the open circuit voltage (V oc) caused in the quantum wells. The efficiency of the proposed solar cell with EBL and HBL layers was found to be 44.65%.

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Section: / 1 (13)mentioning

confidence: 96%

“…Fig. 4b shows the highest efficiency occurred by adding an EBL layer to a base cell at a doping of 2×10 15 1/cm 3 . Figs.…”

Section: Optimization Of Thickness and Doping In The Ebl And Hbl Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Abbasian

Sabbaghi‐Nadooshan

2020

FACTA U EE

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Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure

Gupta

Mudi

Yelashetty

et al. 2021

Physica Status Solidi (b)

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The impact of the built‐in electric field on the emission characteristics of an InAs/GaAs quantum dot (QD) laser structure is investigated by performing systematic spectroscopic measurements. Photoluminescence (PL) features related to the ground state (GS) and excited state (ES) transitions of a QD ensemble are clearly observed in the temperature range of 8–300 K. The cross‐sectional transmission electron microscopy image and a systematic analysis of temperature‐dependent PL data confirm the excellent crystalline and optical quality of the QD laser structure. It is found that the values of the activation energy associated with GS and ES transitions of the QD sample reasonably match with the energy splitting of PL features. This successfully explains the trends observed in temperature‐dependent PL spectra, where thermal transfer of carriers to the wetting/barrier layer via QD excited states is proposed to be a major decay channel. An interesting observation is made where the integrated intensity of PL features increases up to 75 K and falls thereafter during the heating cycle. Such a peak‐like behavior of the integrated intensity is explained by invoking the temperature dependence of the built‐in electric field, which is estimated from the analysis of Franz–Keldysh oscillations observed in photoreflectance spectra and is important in the design of QD lasers.

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Modeling and simulation of high-efficiency GaAs PIN solar cells

et al. 2020

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Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are commercially available. However, various parameters need to be optimized to get maximum efficiency from a SC. In this study we have presented a SC model in which dependence of quantum efficiency (QE) on various parameters has been investigated. The mobility of the carriers has been varied with wide range along with the carrier life time (LT). Results show that maximum efficiencies can be achieved up to 11.10% and 10.81% keeping the electron and hole mobility to be 1500 cm 2 V -1 s -1 and 300 cm 2 V -1 s -1 respectively with electron and hole carrier LT to be 3ns and 7ns respectively. The effect of surface recombination velocity (SRV) has also been brought under observation and the maximum efficiency is found to be 13.75% at electron and hole SRV equal to be 10 3 ms -1 . Results shows that the higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

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Optical properties of InAs/GaAs quantum dot superlattice structures

Cited by 24 publications

References 48 publications

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure

Modeling and simulation of high-efficiency GaAs PIN solar cells

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