Optical properties of InAs/InP ultrathin quantum wells

Albe, V.; Lewis, Laurent J.

doi:10.1016/s0921-4526(01)00269-1

Cited by 23 publications

(7 citation statements)

References 26 publications

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“…7 These experimental results and theoretical calculations using an envelopefunction scheme with effective-mass approximation and empirical tight-binding model 8 seem to show type-I direct transitions in zinc-blende InAs/InP QWs, although some calculations also predict type-II behavior. 9 In contrast, the electronic structure and optical properties of wurtzite InP and InAs are almost unknown. 5,10 Due to the differences in crystal structure and strain, the insights gathered from the studies on zinc-blende InAs/InP QWs cannot be applied directly to wurtzite InP/InAs/InP CMNs.…”

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confidence: 99%

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Pal

Goto

Ikezawa

et al. 2008

Applied Physics Letters

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We study optical transitions from a periodic array of InP/InAs/InP core-multishell nanowires ͑CMNs͒ having a wurtzite crystal structure by using photoluminescence ͑PL͒ and PL excitation ͑PLE͒ spectroscopy. Observing a large Stokes shift between PL and PLE spectra, a blueshift of the PL peak with a cube-root dependence on the excitation power and a slow and nonexponential decay of PL with an effective decay time of 16 ns suggest a type-II band alignment. Band-offset calculation based on the "model-solid theory" of Van Nanometer-scale semiconductor heterostructures such as quantum dots, quantum wires, and quantum wells ͑QWs͒ have been interesting research targets due to their unique size-dependent electronic and optical properties associated with the lower dimensionality and quantum confinement effects. There have been revived interests in semiconductor nanowires ͑NWs͒ due to recent success in growth and fabrication of a regular array of core-shell and core-multishell NWs ͑CMNs͒.1,2 Semiconductor NWs can be used as building blocks of sophisticated nanoscale electronic and photonic devices.3 Much effort has been devoted so far to the growth and fabrication of CMNs and the periodic arrays of such structures.1,2 However, very little is known about the electronic structure and optical properties of this new class of technologically important structures.In this letter we report optical studies on the periodic array of InP/InAs/InP CMNs. Both InP and InAs have a wurtzite crystal structure in the NW form, 4-6 although bulk InP and InAs crystallize to a zinc-blende structure. Moreover, in our CMN sample a thin InAs layer is surrounded by thick InP layers from all sides and the InP layers act like a mold. As a first approximation, we may consider that the InAs lattice experiences a three-dimensional compressive strain and attains the size of the InP lattice in all directions unlike InAs/InP QWs, where the InAs lattice is compressed in the crystal growth plane and is elongated in the growth direction. There have been a few studies on ultrathin InAs/ InP QWs having zinc-blende structure. 7 These experimental results and theoretical calculations using an envelopefunction scheme with effective-mass approximation and empirical tight-binding model 8 seem to show type-I direct transitions in zinc-blende InAs/InP QWs, although some calculations also predict type-II behavior.9 In contrast, the electronic structure and optical properties of wurtzite InP and InAs are almost unknown. 5,10 Due to the differences in crystal structure and strain, the insights gathered from the studies on zinc-blende InAs/InP QWs cannot be applied directly to wurtzite InP/InAs/InP CMNs.We study the InP/InAs/InP CMNs using time-resolved ͑TR͒ and spectrally resolved ͑SR͒ photoluminescence ͑PL͒ and PL excitation ͑PLE͒ measurements. A large Stokes shift between PL and PLE spectra was observed, which along with the absence of strong PLE peak suggests type-II radiative recombination. With increasing excitation power ͑P͒ the PL peaks show a blueshift with a cu...

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confidence: 99%

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Pal

Goto

Ikezawa

et al. 2008

Applied Physics Letters

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“…However, few reports and little attention have been given to the fundamental optical properties of InAs/InP quantum wires. These experimental reports and theoretical results using an envelope function scheme in the effective-mass approximation and on the empirical tight-binding model appear to show type-I direct transitions in zincblende InAs/InP QWs [8], albeit some calculations predict type-II behavior [9].…”

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confidence: 80%

Magnetic field induced donor exciton binding energy in a strained InAs/InP quantum wire

Arunachalam

Peter

2011

Superlattices and Microstructures

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“…Also for intersubband absorption, doping is very important to provide the carriers for the ground subband. The intersubband optical absorption in quantum well structures [16,17] and in - doped semiconductors has been studied before [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

Dakhlaoui¹

2012

OPJ

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We study in this paper the intersubband optical absorption of Si - doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schrödinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor's concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs).

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Optical properties of InAs/InP ultrathin quantum wells

Cited by 23 publications

References 26 publications

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Magnetic field induced donor exciton binding energy in a strained InAs/InP quantum wire

Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

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