Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Abstract

Negative differential resistance associated with hot phonons J. Appl. Phys. 112, 063707 (2012) Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method J. Appl. Phys. 112, 063109 (2012) Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy J. Appl. Phys. 112, 063507 (2012) Residual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 112, 053502 (2012) Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal fieldWe present the results of optical studies of the properties of In x Ga 1Ϫx N epitaxial layers (0Ͻx Ͻ0.2) grown by metalorganic chemical vapor deposition. The effects of alloying on the fundamental band gap of In x Ga 1Ϫx N were investigated using a variety of spectroscopic techniques. The fundamental band-gap energies of the In x Ga 1Ϫx N alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the band gap for In x Ga 1Ϫx N samples with different alloy concentrations were examined by studying the shift of photoluminescence ͑PL͒ emission lines using the diamond-anvil pressure-cell technique. The results show that PL originates from effective-mass conduction-band states. Anomalous temperature dependence of the PL peak shift and linewidth as well as the Stokes shift between photoreflectance and PL lines is explained by composition fluctuations in as-grown InGaN alloys.

Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

“…Therefore, there is observed compositional inhomogeneity or strain and it should result in high line width values in In x Ga 1−x N layers. Due to the presence of strain in InGaN samples, our line width values were slightly higher than reported values by several researches [22,23]. Also, lattice mismatch between GaN and sapphire substrate are sufficient to generate misfit dislocations.…”

Time Resolved Optical Studies of InGaN Layers Grown on LGO

“…The relative intensity of the peak centered at about 2.5eV to the one centered at 2.1eV varies as a function of beam position. These energies match very well to the bandgaps of In 0.289 Ga 0.711 N (2.5eV) and In 0.44 Ga 56 N (2.1eV) [13]. The changes in the relative intensity of the two spectral components prove the existence of well- At low temperature, we observed a much stronger signal for TRPL, allowing us to analyze the lifetimes more readily.…”

Universal bandgap bowing in group-III nitride alloys

“…The bandgap bowing in group III nitride alloys was found to be proportional to the bandgap difference between the end-point compounds. InGaN, [6] InGaN, [11] InGaN, [12] InAlN, this work InAlN, [7] AlGaN, this work fit, β=0.54 abs, this work abs, [7] PL, this work InGaN, [6] InGaN, [12] InGaN, [11] InAlN, [7] InAlN, this work GaAlN, this work …”