Optical properties of laser ablated gallium lanthanum sulphide chalcogenide glass thin films prepared at different deposition laser energy densities

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

“…of the Ga-La-S [19,50], Ag-As-S, Pb-Ag-As-I-S, Cd-Ag-As-I-S, Ge-Ga-S-Cs-I, Cu-Ag-As-Se-Te, PbS-AgI-As-S, CdS-AgI-As-S, Tl-Ag-As-I-S, Cu-Ag-As-Se-Te, Ag-I-As-S, Ag-I-AsSe and other (pure and doped with Pr 3+ ions) systems (e.g. [3][4][5][6][15][16][17]19,[24][25][26][28][29][30][31][32][33]49,50,52,57,59,61,71,76,78,104,105,107]). Many of them have been used as ion-selective membranes, ion selective sensors, electronic tongue [26] or as light emission materials.…”

Electrical properties of Bi-implanted amorphous chalcogenide films

“…and Ge-Sb-Te/Si(100) HJs at 300 K and 77 K are shown in the insets of Figure 5. The rectification behaviour is observed independently of the conductivity type of crystalline silicon and the width of the optical gap ranging from 0.8 eV in amorphous GeTe [37] to 2.4 eV in Ga-La-S [38]. It is plausible to suggest that rectification in amorphous chalcogenide/silicon heterojunctions is determined by the silicon bend bending rather than the band offsets at the amorphous chalcogenide/silicon interface.…”

Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion

“…Even lift-off is difficult since the only physical vapor deposition (PVD) techniques known to be compatible with GLS are sputtering 4 and pulsed laser deposition (PLD). 5,6 Both methods tend to be conformal, often making patterned features inseparable from the photoresist.…”

“…To date, three methods have been used to deposit thin films of GLS-based glasses: pulsed laser deposition, 5,6,25 hot dip spin coating, 25,26 and sputtering. 4 All three methods are well-suited to deposition of multicomponent glasses.…”