2018
DOI: 10.1016/j.ijleo.2017.10.136
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Optical properties of lithium niobate crystals

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Cited by 31 publications
(10 citation statements)
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“…[48,49] It should be noted that the bandgap obtained here (4.8493 eV indirect, 4.8707 eV direct) is significantly wider than the observed optical absorption cutoff of 3.5 or 3.9-4.3 eV reported by different authors. [50][51][52][53] Our calculated value is also significantly larger than those found in most other calculations based on DFT with LDA-or GGA-type functionals. However, the optic absorption actually measures exciton absorption (usually 0.5-1.0 eV smaller than E g for wide-bandgap dielectrics, [54] and reference therein) or defect-induced levels in the bandgap and only GW correction to the GGA-type calculation can give a reasonable true single-particle bandgap as recently discussed by Thierfeld et al, [24] where Eg was found to be 4.71 eV, pretty close to our calculated value here.…”
Section: Resultscontrasting
confidence: 71%
“…[48,49] It should be noted that the bandgap obtained here (4.8493 eV indirect, 4.8707 eV direct) is significantly wider than the observed optical absorption cutoff of 3.5 or 3.9-4.3 eV reported by different authors. [50][51][52][53] Our calculated value is also significantly larger than those found in most other calculations based on DFT with LDA-or GGA-type functionals. However, the optic absorption actually measures exciton absorption (usually 0.5-1.0 eV smaller than E g for wide-bandgap dielectrics, [54] and reference therein) or defect-induced levels in the bandgap and only GW correction to the GGA-type calculation can give a reasonable true single-particle bandgap as recently discussed by Thierfeld et al, [24] where Eg was found to be 4.71 eV, pretty close to our calculated value here.…”
Section: Resultscontrasting
confidence: 71%
“…Silicon on insulator (SOI), Indium Phosphide (InP), Silicon Nitride (SiN), and Lithium Niobate (LN) are wellknown materials used in the development of this technology. The latter is highlighted as a prominent material due to its inherent properties, including strong second-order nonlinearity, wide transparency windows, and small index difference, [5,6] .These outstanding material properties tremendously impact the development of on-chip integrated photonic technology, making the promise for LN devices to eventually replace the bulky conventional off-chip systems. On top of that, the LN ability to inherently generate entangled photon pairs makes it a prominent material for quantum information applications such as quantum cryptographic systems, [7] teleportation [8] and entanglement swapping.…”
Section: Introductionmentioning
confidence: 99%
“…Currently, a few researchers are turning their attention to optical crystals as substrates, with graphene/LiNbO 3 structures being one of the most promising combinations. LiNbO 3 , also known as the optical 'silicon' material [17][18][19], is an artificial crystal that has a wide range of optical applications and exhibits the characteristics of ferroelectric, piezoelectric, pyroelectric, photovoltaic, photoelastic, and photorefractive [20][21][22]. Its interaction with graphene has the potential to change the quantum properties of two-dimensional nanomaterials, resulting in new photoelectric properties.…”
Section: Introductionmentioning
confidence: 99%