Optical properties of manganese doped wide band gap ZnS and ZnO

Godlewski, M.; Wójcik-Głodowska, A.; Guziewicz, E.; Yatsunenko, S.; Zakrzewski, A.; Dumont, Y.; Chikoidze, E.; Phillips, M. R.

doi:10.1016/j.optmat.2008.12.031

Cited by 34 publications

(30 citation statements)

References 32 publications

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“…1) that the similar situation occurs also in ZnO. A rapid quenching of a visible PL is observed for ZnCoO with Co fractions below 1 mol%, i.e., this process is more efficient that the one reported by us for ZnMnO films [5,8].…”

Section: Discussionsupporting

confidence: 61%

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Optical Properties of ZnCoO Films and Nanopowders

et al. 2009

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ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either atomic layer deposition or by a microwave driven hydrothermal method. We report that doping with cobalt quenches a visible photoluminescence of ZnO. We could observe a visible photoluminescence of ZnO only for samples with very low Co fractions (up to 1%). Mechanisms of photoluminescence quenching in ZnCoO are discussed. We also found that ZnO films remained n-type conductive after doping with Co, indicating that a high electron concentration and cobalt 2+ charge state can coexist.

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Section: Discussionsupporting

confidence: 61%

“…Moreover, in ZnO Mn changes its charge state from 2+ to 3+ [5], making high p-type doping still more difficult. This is why we checked in this work possible charge states of Co in ZnO and also if films doped with Co remain n-type conductive, i.e., if a high electron concentration and Co 2+ charge state can coexist.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of ZnCoO Films and Nanopowders

et al. 2009

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“…ZnTMS. For example, we observed that Mn doping efficiently quenches visible emission of ZnO [5]. We show that this process is still more efficient in ZnCoO, indicating that both Mn and Co ions act as emission deactivators in ZnO.…”

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confidence: 78%

SEM, EDS and CL Investigations of ZnMnO and ZnCoO Layers Grown at Low Temperature by Atomic Layer Deposition

et al. 2010

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Bulk samples, thin films and quantum dots of II-TM-VI and III-TM-V semiconductor alloys (where TM stands for a transition metal) are intensively studied for their possible spintronics applications. Room temperature ferromagnetism (RT FM) should be achieved in these diluted magnetic semiconductors (DMS) to allow for application of these materials in practical devices. This is an ultimate goal of the investigations.RT FM was theoretically predicted for GaMnN and ZnMnO [1] (and then for other ZnTMO samples), which thus became the most studied spintronics materials. Soon after several groups reported RT FM of ZnMnO and ZnCoO (see e.g. [2]), but this is believed now to be due to inclusions of foreign phases, which we also demonstrate in the present work, and metal accumulations rather than volume properties of these two ZnTMO materials (see e.g. [3,4] and references given there).Origin of the observed magnetic ordering remains often not clear. In the present work we employed scanning electron microscopy (SEM), energy dispersive X-rays spectroscopy (EDS) and cathodoluminescence (CL) methods to investigate topography, uniformity (we also used secondary ions mass spectroscopy (SIMS)) and chemical composition of ZnTMO (TM stands here for Co and Mn) layers grown at low temperature by Atomic Layer Deposition. Samples obtained at these conditions are uniform and show only paramagnetic response, as reported for ZnMnO in [3,4].We demonstrate that these ZnTMO samples show several surprising properties not observed in e.g. ZnTMS. For example, we observed that Mn doping efficiently quenches visible emission of ZnO [5]. We show that this process is still more efficient in ZnCoO, indicating that both Mn and Co ions act as emission deactivators in ZnO. Emission quenching by Mn and Co allows us to study their distribution in ZnO from maps of in-plane changes of the CL intensity. We utilize the fact that the CL intensity anti-correlates with the TM concentration.Strong magneto-optical effects are commonly seen in such DMS samples as CdMnTe. In CdMnTe excitonic emission shifts towards lower energy (by few meV) and splits for photoluminescence measured at different polarizations and magnetic field of a few T [6]. This was observed by us in CdMnTe layers [6] with a similar Mn concentration to the one studied by us at present in ZnMnO. The efect was also reported for p-type ZnMnO layers [7]. Thus, in our magneto-optical investigations of n-type ZnMnO samples we looked for similar effects. Surprisingly, no spectral shifts and well-resolved splitting were observed for magnetic field up to 6 T.

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“…This effect was attributed to absorption of incident photons by Mn Zn 2+ ions caused by intra d-shell electron transitions from the ground to excited states [17,19]. The absence of any structure in the absorption tail leads to supposition that these excited states are located in some band continuum [17,23,24]. The origin of this absorption tail, however, requires further study.…”

Section: Resultsmentioning

confidence: 99%

Influence of Mn doping on ZnO defect-related emission

Stara¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Defect related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration N Mn was varied from 10 19 to 10 21 cm -3.The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing the Mn content. Photoluminescence (PL) spectra of prepared samples were measured at room temperature and analyzed by Gaussian fitting. PL of undoped ceramics exhibited itself as intense broad band peaking at about 550 nm. Two effects were shown to occur as a result of Mn doping: i) drastic quenching of self-activated PL accompanied by gradual red-shift of spectral boundary of the quenching with increasing the Mn content; ii) appearance of a new emission band peaking at 645 nm that becomes dominant in the PL spectrum at N Mn = 10 20 cm -3 . The observed effects were believed to be due to re-absorption of self-activated ZnO emission by Mn-related centers. The following recombination in excited centers was supposed to occur by both radiative and nonradiative ways, the former being responsible for 645 nm PL band.

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Optical properties of manganese doped wide band gap ZnS and ZnO

Cited by 34 publications

References 32 publications

Optical Properties of ZnCoO Films and Nanopowders

Optical Properties of ZnCoO Films and Nanopowders

SEM, EDS and CL Investigations of ZnMnO and ZnCoO Layers Grown at Low Temperature by Atomic Layer Deposition

Influence of Mn doping on ZnO defect-related emission

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