Optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaAs</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>on GaAs

Hung, W. K.; Chern, Ming–Yau; Chen, Y. F.; Yang, Zhi-Xin; Huang, Ying

doi:10.1103/physrevb.62.13028

Cited by 17 publications

(10 citation statements)

References 24 publications

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“…[5,6] and references therein). ik et al [7] present the band gaps of epitaxial layers up to 3.3% N. Using a nitrogen rf plasma Bi and Tu [2] obtain a relatively high N content by lowering the growth temperature.…”

Section: Introductionmentioning

confidence: 97%

Stability and band gaps of As‐rich and N‐rich GaAsN alloys: Density‐functional supercell calculations

Jenichen

Engler

2004

Physica Status Solidi (b)

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Total energies and band gap energies of cubic cells with various arrangements of Ga 32 As 32Àn N n (n ¼ 0-8 and n ¼ 28-32 corresponding to 0.0-25.0% N and 12.5-0.0% As) are calculated using the density-functional supercell method. In the As-rich limit up to an exchange of 6.2% N isolated N atoms (maximum N distance) are the most stable arrangement and provide the typical reduction of the band gap energy from about 1.5 eV (GaAs) to about 1 eV caused by reduction of the N distance. For higher N content special N distributions are the most stable arrangements. GaN m clusters (m ¼ 2-4) and isolated N atoms are less stable. The band gap remains nearly constant at about 1 eV between 6.2 and 18.8% N. The good agreement between the experimental band gap energies and ones calculated for the most stable arrangements points out that the experimental distribution of the atoms is the thermodynamic equilibrium distribution. In the N-rich limit, linear As chains in [110] direction or fragments of them are the most stable arrangement. At 9.4% As the band gap disappears.

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Section: Introductionmentioning

confidence: 97%

Stability and band gaps of As‐rich and N‐rich GaAsN alloys: Density‐functional supercell calculations

Jenichen

Engler

2004

Physica Status Solidi (b)

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“…Spectroscopic ellipsometry measurements on the samples were performed at room temperature using an automatic ellipsometer Sopra GESP5. The system uses a 75-W xenon lamp, a rotating polarizer, an autotracking analyzer, a double monochromator, and a single-photon-counting photomultiplier detector [8,9]. Data were collected in the 0.6-4-eV photon energy range at an angle of 75 • .…”

Section: Experimental Methodsmentioning

confidence: 99%

Optical properties of Ni3Al, Ni3Ga, and Ni3In

Hsu¹,

Wang

2004

Journal of Alloys and Compounds

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“…The optical properties of GaN x As 1Àx have been studied using SE by many authors (see e.g. [120][121][122]). The «(E) spectra recorded by Leibiger et al [122] are shown in Figure 10.20.…”

Section: (B) Ganasmentioning

confidence: 99%