2013
DOI: 10.1155/2013/216259
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Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method

Abstract: Group III nitride semiconductors with direct band gaps have recently become increasingly important in optoelectronics and microelectronics applications due to their direct band gaps, which cover the whole visible spectrum and a large part of the UV range. Major developments in wide band gap III-V nitride semiconductors have recently led to the commercial production of hightemperature, high-power electronic devices, light-emitting diodes (LEDs), and laser diodes (LDs). In this study, GaN nanowires were grown on… Show more

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Cited by 3 publications
(1 citation statement)
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“…1D structures of GaN have also been studied in recent years such as nanowires [37][38][39][40] and nanotubes [41,42]. Different dopants have been incorporated to optimize the physical proprieties of GaN based DMSs such as Mg [43][44][45], Mn [46], Fe [47], Cu [48], Si [49,50], Cr [51] and Tb [52], etc. However, the studies about Co-doped GaN nanowires are very few and even the existing results need to be optimized for a high Curie temperature, better structure, morphology, etc.…”
Section: Introductionmentioning
confidence: 99%
“…1D structures of GaN have also been studied in recent years such as nanowires [37][38][39][40] and nanotubes [41,42]. Different dopants have been incorporated to optimize the physical proprieties of GaN based DMSs such as Mg [43][44][45], Mn [46], Fe [47], Cu [48], Si [49,50], Cr [51] and Tb [52], etc. However, the studies about Co-doped GaN nanowires are very few and even the existing results need to be optimized for a high Curie temperature, better structure, morphology, etc.…”
Section: Introductionmentioning
confidence: 99%