2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) 2019
DOI: 10.1109/pvsc40753.2019.8981333
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Optical Properties of Organic Inorganic Metal Halide Perovskite for Photovoltaics

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Cited by 4 publications
(3 citation statements)
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“…The optical properties of metal halide perovskites have been found to be highly tunable, making them attractive for a wide range of applications in photovoltaics, light-emitting diodes, and photodetectors. [2][3][4] Researchers have been investigating ways to enhance the absorption and emission properties of these materials, as well as improve their stability and performance under different environmental conditions. Additionally, the understanding of charge transport mechanisms in metal halide perovskites is crucial for the development of efficient electronic devices with high conductivity and low recombination rates.…”
Section: Introductionmentioning
confidence: 99%
“…The optical properties of metal halide perovskites have been found to be highly tunable, making them attractive for a wide range of applications in photovoltaics, light-emitting diodes, and photodetectors. [2][3][4] Researchers have been investigating ways to enhance the absorption and emission properties of these materials, as well as improve their stability and performance under different environmental conditions. Additionally, the understanding of charge transport mechanisms in metal halide perovskites is crucial for the development of efficient electronic devices with high conductivity and low recombination rates.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] 10 to 30 meV. [23,24] The consequence of this is a much weaker absorption coefficient near the band edge, and a requirement to have a relatively thick Pb:Sn absorber layer in order to absorb sufficient infrared (IR) light. [11][12][13][14][15] Although the reason is currently unknown, the presence of MA enables thicker and smoother Pb:Sn perovskite films to be processed.…”
Section: Introductionmentioning
confidence: 99%
“…The exciton binding energy, on the order of a few meV at room temperature, for Pb:Sn perovskites is considerably lower than that in lead‐based perovskites, which can range from 10 to 30 meV. [ 23,24 ] The consequence of this is a much weaker absorption coefficient near the band edge, and a requirement to have a relatively thick Pb:Sn absorber layer in order to absorb sufficient infrared (IR) light. [ 11–15 ] Although the reason is currently unknown, the presence of MA enables thicker and smoother Pb:Sn perovskite films to be processed.…”
Section: Introductionmentioning
confidence: 99%