Optical Properties of (Oxy)Nitride Materials: A Review

Xie, Rong‐Jun; Hintzen, H. T.

doi:10.1111/jace.12197

Cited by 310 publications

(194 citation statements)

References 294 publications

(824 reference statements)

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“…The band gap for the group III nitrides decreases with increasing atomic weight of the metal constituent: AlN E g = 6.2 eV at 295 K [199], GaN E g = 3.39 eV [198] and InN E g = 0.7-0.8 eV [200,201]. h-AlN, h-GaN and h-InN crystallize in the wurtzite-type structure (space group P6 3 mc), where anions and cations are surrounded tetrahedrally by the respective counter ions.…”

Section: Group III and Iv Nitridesmentioning

confidence: 99%

Chemistry of Ammonothermal Synthesis

2014

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Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH 2 , Zn(NH 2 ) 2 ), imides (e.g., Th(NH) 2 ), ammoniates (e.g., Ga(NH 3 ) 3 F 3 , [Al(NH 3 ) 6 ]I 3 · NH 3 ) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs 2 Te 5 ). In particular, large scale production of high quality crystals is possible, due to comparatively simple scalability of the experimental set-up. The ammonothermal method is defined as employing a heterogeneous reaction in ammonia as one homogenous fluid close to or in supercritical state. Three types of milieus may be applied during ammonothermal synthesis: ammonobasic, ammononeutral or ammonoacidic, evoked by the used starting materials and mineralizers, strongly influencing the obtained products. There is little known about the dissolution and materials transport processes or the deposition mechanisms during ammonothermal crystal growth. However, the initial results indicate the possible nature of different intermediate species present in the respective milieus. A Alkali or alkaline-earth metal, A(1) = alkali metal, A(2) = alkaline-earth metal B Further metal, might be main group metal, transition or rare-earth metal M Transition metal, excluding Sc, Y, La R Rare-earth metal, Sc, Y, La-Lu X Halide E Other main group element

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Section: Group III and Iv Nitridesmentioning

confidence: 99%

Chemistry of Ammonothermal Synthesis

2014

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“…are widely used in numerous applications, such as electronics, optoelectronics, photocatalysis, and energy technologies, superior materials may be found in mixed anion inorganic materials, such as metal oxynitrides, 1,2 oxychalcogenides, [3][4][5] oxycarbides, 6 carbonitrides, 7 borocarbides, 8 and boronitrides. 9 Due to their varied crystal structures, anion ordering, 10 and ability to tune properties with anion composition, mixed anion inorganic materials span a broad range of physical, chemical, and electronic properties, providing opportunities to improve material performance for a variety of applications.…”

Section: Introductionmentioning

confidence: 99%

“…1 In the field of solar fuels, the development of an efficient photoanode has remained a bottleneck due to the deep valence band energy (with respect to the standard equilibrium potential for water oxidation) of typically studied metal oxide semiconductors. 13 Metal nitride semiconductors generally exhibit desirable band energetics for solar water oxidation with valence band energies more positive than metal oxide analogs, yet the chemical instability of metal nitrides in aqueous conditions has largely rendered them unsuitable for aqueous photoelectrocatalysis.…”

Section: Introductionmentioning

confidence: 99%

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

et al. 2015

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Recent efforts have demonstrated enhanced tailoring of material functionality with mixed anion materials, yet exploratory research with mixed anion chemistries is limited by the sensitivity of these materials to synthesis conditions. Synthesis of a particular metal oxynitride compound by traditional reactive annealing requires specific, limited ranges of both oxygen and nitrogen chemical potentials to establish equilibrium between the solid-state material and a reactive atmosphere. Using Ta-O-N as an example system, we describe a combination of reactive sputter deposition and rapid thermal processing (RTP) for synthesis of mixed anion inorganic materials. Heuristic optimization of reactive gas pressures to attain a desired anion stoichiometry is discussed, and the ability of RTP to enable amorphous to crystalline transitions without preferential anion loss is demonstrated through the controlled synthesis of nitride, oxide, and oxynitride phases.

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“…[28][29][30][31][32][33][34][35] The remarkable optical properties are ascribed to its electronic band structure that can be tailored by altering its chemical composition, thereby allowing the development of exciting optical materials. 36 The ionic-covalent nitrides where nitrogen-(non-metal) bonds is dominant, and the non-metal associated with N occupy interstitial spaces in the nitrogen framework. The bonds are considerably influenced by the element bonded to N. The luminescent nitrides belong to this class.…”

Section: Narrow-band Nitride Phosphorsmentioning

confidence: 99%

Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities

Leaño

Fang

Liu

2017

ECS J. Solid State Sci. Technol.

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Searching for narrow-band red-emitting and thermally stable phosphors is the ultimate strategy toward enhanced performance of phosphor converted light emitting diodes (pc-LED). The red emission is assured by the nitride host because of its relatively more covalent character than oxides and sulfides; however, the narrow emission is attributed to crystallographic, morphological, and electronic considerations. The symmetric coordination site ensures equal ligand effect in all direction fits well with the configuration of Eu 2+ f orbitals in the excited state, as observed in cuboid nitrides. Further, thermal stability is ascribed not only to suitable bandgap but more specifically, a relatively distant location of the lowest 5d level from the bottom of the conduction band (CB) that consequently entails high energy to quench excited electrons by exciting them further up to the CB. Modes toward the development of new nitride hosts with potentially narrow-band emission have been identified. A viewpoint on light-emitting diode (LED), backlighting, and laser lighting, which remains the most economically-rewarding phosphors application, is presented. Other exciting frontiers, such as agricultural illumination and persistent luminescence, maximize nitride systems that have other properties other than the stringent narrow-band red emission and excellent thermal stability required for the desired improvement of the mainstream LED application. is a Critical Review in Electrochemical and Solid State Science and Technology (CRES 3 T). This article was reviewed by Anant Setlur (setlur@ge.com) and Jing Wang (ceswj@mail.sysu.edu.cn). This paper is part of the JSS Focus Issue on Visible and Infrared Phosphor Research and Applications.The discovery, development, and commercialization of phosphors are expected to satisfactorily fare with the benchmark set for phosphor converted-LEDs. First, the excitation wavelength of the phoshpors must be compatible with the blue LED pump, thereby emitting the desired colors and consequently generating white light. Second, the quantum efficiency should be high. Third, phosphor must have a high absorption rate in the LED range, which technically narrows the choices to those that are excitable through 4f → 5d, d → d, np → nd, and ns → np transitions. Fourth, it must have high thermal quenching temperature. Fifth, the inherent stability against moisture and continuous irradiation ensures the durability and longevity of the device. Sixth, a rational design must be presented for the synthesis conditions from the selection of starting materials, synthesis strategy, and costs to allow the smooth cross-over to eventual industrial-scale production. 1,2Tuning the phosphor photoluminescence requires a tunable phosphor and a set of strategies to introduce changes in intensity, emission wavelength, and full width at half-maximum (fwhm). Moreover, the following are of paramount consideration in tuning the phosphor photoluminescence. First, a clear understanding of crystal and local structures and the investigati...

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Optical Properties of (Oxy)Nitride Materials: A Review

Cited by 310 publications

References 294 publications

Chemistry of Ammonothermal Synthesis

Chemistry of Ammonothermal Synthesis

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities

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