Optical Properties of Polycrystalline Silicon Films

Harbeke, G.

doi:10.1007/978-3-642-82441-8_9

Cited by 28 publications

(14 citation statements)

References 25 publications

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“…The clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of film that confirmed the mixture of cubic and hexagonal phases [29]. The surface roughness was decreased; the ZnSe crystallites and/or grains are not diffused together like other II-VI compounds [30]. Thus, it was confirmed that the self-diffusion coefficient of ZnSe nanocrystals and/or grains is very small.…”

Section: Xrd Analysismentioning

confidence: 71%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Section: Xrd Analysismentioning

confidence: 71%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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“…In the investigated films, the contribution of grain boundaries to the overall conductivity seems to be negligibly low due to two reasons. First, it is generally believed that grain boundaries are more disordered as compared to those of the intragrain region [1,2,19]. This results in a higher resistance of the grain boundary, when comparing to the intragrain regions.…”

Section: Resultsmentioning

confidence: 99%

“…Because of atomic structure and electronic properties of grain boundaries are not fully understand, theoretical modeling is regarded as a powerful means for investigation of physical properties inherent to polycrystalline films. A number of models were earlier developed [1,2]. Among others, Petriz's model [3] seems to be the most cited.…”

Section: Introductionmentioning

confidence: 99%

“…Naturally, in this case the potential barrier height is unchanged through a polycrystalline film, and its value can be estimated, for instance, from the DC conductivity measurements. However, in 'real' films atomic structure as well as electronic properties of grain boundaries may vary within a separate grain, giving rise to the barrier height fluctuation [1][2][3]. Moreover, bulk properties of grains, such as inhomogeneous distribution of native defects and impurities in the intragrain region, variations in the grain size and form, can also influence the barrier height.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of grain boundaries in CdTe polycrystalline films

Tetyorkin¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. CdTe polycrystalline films with the average size of grains within the range 10…360 m were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film's surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements.

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“…Due to application of constant illumination it is possible to study barriers properties. Because the Debye shielding length in investigated mc-Si is about 180 nm, emission theory can be applied for interpretation of measurement results [2][3][4]. Knowing the value of current density flowing through the singular barrier, one can determine its height from the formula: …”

mentioning

confidence: 99%

Study of bulk photovoltaic effect and photovoltaic barrier effect distributions in multicrysta lline silicon

Jung

Piotrowski

Sikorski

et al. 2007

Phys. Status Solidi (c)

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Photoelectric voltage distribution on mc-Si wafers subjected to phosphorus gettering processes was investigated. It was demonstrated, that the measured photoelectric voltage results from bulk photovoltaic effect and photoelectric voltage connected with potential barriers occurring on grains boundaries. It was shown that sample illumination results in reduction of bulk photoelectric effect enabling better visualization and investigation of potential barriers. Relations determining photoelectric voltage distribution on single barrier are given.1 Introduction Today the dominance of solar cells production by crystalline silicon with multicrystal (mc-Si) growing faster then monocrystal is observed. In order to obtain better electric parameters of mcSi, various techniques are applied for monitoring resisitivity distribution, potential barrier height distribution and especially the value and distribution of charge carrier lifetime in this material. The lifetime measurements are needed for initial material evaluation and for assessment of the influence of technological processes on gettering and passivation of extended defects, gliding plane and grain boundaries. In this research mc-Si used for solar cells production was investigated. Nonhomogeneous resistivity distributions were studied by measurements of the bulk photovoltaic effect (BPV) For revealing the space distribution of potential barriers and for evaluation their height, measurements of photovoltaic effect with illumination were carried on.

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Optical Properties of Polycrystalline Silicon Films

Cited by 28 publications

References 25 publications

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Characterization of grain boundaries in CdTe polycrystalline films

Study of bulk photovoltaic effect and photovoltaic barrier effect distributions in multicrysta lline silicon

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