Optical Properties of Porous Silicon Prepared at Different Etching Times

Abstract

This study presents porous silicon (PSi) samples preparation by electrochemical etching method of p type silicon wafers of 100 degree orientation with different etching time (15, 17, 19, 21)min and with fixed electrolyte solution (40% HF: 99.98% CH 3 OH) (1:1). The optical property is described by PhotoLuminescence (PL). The PL measurements of PSi samples show that the energy gap increased after the etching process, and all samples exhibit blue shift with the increasing PL intensity.