Optical properties of quantum wells and superlattices under electric fields

Méndez, E. E.; Agulló‐Rueda, F.

doi:10.1016/0022-2313(89)90059-8

Cited by 53 publications

(9 citation statements)

References 41 publications

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“…2 shows luminescence spectra on such a homogenous device recorded with different gate voltages applied. The energy shifts of the quantum well photoluminescence at gate voltages below Vth reflect the vertical quantum-confined-stark-effect with the same strength already reported in previous studies [12] for a 15nm quantum well (inset Fig. 2).…”

Section: Laterally Homogenous Quantum Well Devicessupporting

confidence: 85%

Optical properties of quantum wells with a field-effect-induced lateral superlattice

Peters

Hansen

Kotthaus

et al. 1993

Le Journal de Physique IV

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Abstract:A new developed stacked gate technique and a special MBE-grown quantum well structure is used to investigate the optical properties of a quantum well in a field effect induced lateral superlattice potential. Gate voltages applied at two different gates allow to tune both the superlattice potential amplitude as well as the energetical position with respect to the Fermienergy. The luminescence and luminescence excitation spectra show a strong dependence on these voltages. At certain gate voltage configurations electrons are filled into the minima of the lateral potential and form an array of quasi one-dimensional electron channels. At this point the luminescence splits into distinct peaks reflecting the lateral separation of photo excited electrons and holes. Excitation measurements illustrate the existence of occupied electron channels and unoccupied barriers between them.

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Section: Laterally Homogenous Quantum Well Devicessupporting

confidence: 85%

Optical properties of quantum wells with a field-effect-induced lateral superlattice

Peters

Hansen

Kotthaus

et al. 1993

Le Journal de Physique IV

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“…4) [10] which is not included in the theory. The experimentally observed upper miniband edge energy E"is smaller than expected from our theory.…”

mentioning

confidence: 99%

Coexistence of Wannier-Stark transitions and miniband Franz-Keldysh oscillations in strongly coupled GaAs-AlAs superlattices

et al. 1994

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Using differential photocurrent spectroscopy we have studied the field dependent absorption in a GaAs/AlAs superlattices, which have only one monolayer AlAs barriers, with unpreceded dynamical resolution. We are able to resolve a symmetric Wannier-Stark (WS) fan up to an index of plus/minus 9 and for the first time Franz-Keldysh (FK) oscillations across the whole energy width of the lowest combined miniband. A modulation of the WS transitions by FK oscillations (and vice versa) is clearly visible. We also present results or theoretical calculations which describe in detail this coexistence of the linear WS fan and the nonlinear fans of the FK oscillations

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“…Figure 2 shows the QCSS of the ground and first two excited electron energy levels in a SiO 2 /Si/SiO 2 structure whose abrupt Si well width is 100 Å. In this case, the QCSS is more than five times stronger than that in a single GaAs/Al x Ga 1−x structure with the same spatial dimensions (see Refs [17][18][19]). The QCSS of the ground state energy level is always negative (blue), whether the interfaces are abrupt or not.…”

Section: The Nonabrupt Sio 2 /Si/sio 2 Quantum Well Modelmentioning

confidence: 97%

“…While electric field effects in abrupt GaAs/Al x Ga 1−x As quantum wells have been investigated extensively [17][18][19], this is not the case for SiO 2 /Si/SiO 2 quantum wells. Most technological applications of quantum wells require the application of electric fields, and it seems opportune to pursue an improved knowledge on the subject.…”

Section: Introductionmentioning

confidence: 99%