Optical Properties of RF-Sputtered Indium Oxide Films

Szczyrbowski, J.; Dietrich, A.; Hoffmann, H.

doi:10.1002/pssa.2210690121

Cited by 40 publications

(10 citation statements)

References 11 publications

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“…Authors attributed this dependence to the (In i ••• -O i ″) • cluster formation [77]. In other work Hall measurements are presented for In 2 O 3 films obtained at different p (O 2 ) by RF sputtering without intentional heating [78]. Conductivity was found to be rather constant (~3 × 10 3 Ω −1 cm −1 ) at low oxygen partial pressure (<8 × 10 −4 Pa).…”

Section: Discussionmentioning

confidence: 98%

Crystallisation Phenomena of In2O3:H Films

et al. 2019

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The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

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Section: Discussionmentioning

confidence: 98%

Crystallisation Phenomena of In2O3:H Films

et al. 2019

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“…This is possibly due to the increase in particle size and decrease in strain and dislocation density. The doping of vanadium into the indium oxide reduces the band gap (band gap of pure indium oxide is 3.75 eV 42 ). This band gap reduction may be attributed to the decrease in carrier concentration because some V causes disorder in the indium oxide lattice and V atoms acts as a carrier trap instead of electron donors.…”

Section: Optical Propertiesmentioning

confidence: 99%

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

et al. 2016

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Vanadium (5 at. %) doped Indium Oxide (V: In 2 O 3 ) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10 -3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K range with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness.

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“…Since 37 n is the Bohr orbit number, Z is the charge of an ion, and the energy is measured from the bottom of the conduction band.…”

Section: Permittivity Functionmentioning

confidence: 99%

Negative refraction index in the magnetic semiconductorIn2−xCrxO3: Theoretical analysis

Kussow

Akyurtlu

2008

Phys. Rev. B

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Based on theoretical arguments, we have found that homogeneous indium oxide is a negative refractive index material if doped with Cr. In accordance with calculations, this magnetic semiconductor or In 2−x Cr x O 3 in its polycrystalline form should possess a fully isotropic strongly pronounced negative refractive index at ϳ10.48 THz. The effect is due to the coexistence of the spin-wave mode with the plasmonic mode, and both modes are activated by the electromagnetic field of the light with simultaneous permittivity and permeability responses within the frequency band close to the ferromagnetic resonance. The analytical and numerical calculations of the frequency-dependent refractive index, n͑͒, were conducted in the framework of the macroscopic theory of ferromagnets, the modified band theory, and the conduction electrons-mediated exchange integral formalism.

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Optical Properties of RF-Sputtered Indium Oxide Films

Cited by 40 publications

References 11 publications

Crystallisation Phenomena of In2O3:H Films

Crystallisation Phenomena of In2O3:H Films

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

Negative refraction index in the magnetic semiconductorIn2−xCrxO3: Theoretical analysis

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