2018
DOI: 10.1016/j.diamond.2018.03.010
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Optical properties of silicon-vacancy color centers in diamond created by ion implantation and post-annealing

Abstract: Silicon-vacancy (SiV) color centers have been created in diamond by ion implantation and post annealing at LABEC (Florence

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Cited by 37 publications
(35 citation statements)
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“…Sample A was implanted with four different Si-ion fluences of 10 8 cm -2 , 10 12 cm -2 , 10 13 cm -2 and 10 14 cm -2 . Unlike for intrinsic single-crystal diamond [8], fluence-dependent background at the emission wavelength of the SiV color centers is evident, especially for the higher implantation fluences, as depicted in Fig. 1a.…”
Section: Spectroscopy and Discussionmentioning
confidence: 91%
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“…Sample A was implanted with four different Si-ion fluences of 10 8 cm -2 , 10 12 cm -2 , 10 13 cm -2 and 10 14 cm -2 . Unlike for intrinsic single-crystal diamond [8], fluence-dependent background at the emission wavelength of the SiV color centers is evident, especially for the higher implantation fluences, as depicted in Fig. 1a.…”
Section: Spectroscopy and Discussionmentioning
confidence: 91%
“…Figure 1b shows the measurement in different parts of the sample. Depending on the implantation fluence and on the observed region (the ion distribution for a given fluence is not uniform [8,29]), the contribution from the background changes. The region implanted with 10 8 cm -2 shows relatively low background, comparable to the region, where no ions are implanted.…”
Section: Spectroscopy and Discussionmentioning
confidence: 99%
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“…The incorporation of color centers in these structures is mainly performed in situ or via ion implantation . Even though ion implantation offers a better spatial resolution for the incorporation of color centers through masks or via an aperture in the bulk material, or directly in structures, it is always accompanied with a damage of the diamond lattice affecting the optical properties of color centers in diamond.…”
Section: Introductionmentioning
confidence: 99%