Optical properties of SiO/sub x/ nanostructured films by pulsed-laser deposition

Abstract

SiO,, nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory. @2005 Optical Society of America OCIS codes: (310.6860) Thin films, optical properties; (140.3390) Laser materials processing Ever since visible photoluminescence (PL) was observed in Si nanostructures, Si nanocrystals (NCs) have attracted great interest in microelectronics and optoelectronics. They have opened up new opportunities for developing Si-based light emitting devices which are compatible with current electronic ultralarge-scale-integration (ULSI) technologies. In this study, we examined the structures and properties of SiOx nanostructured films formed by PLD and also the annealing and oxidation effects on the SiO, films. SiOx nanostructured films were deposited in