Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Wang, Qi; Zhao, Songrui; Connie, Ashfiqua T.; Shih, I.; Mi, Zetian; Gonzalez, Timothy; Andrews, Mark P.; Du, Xiaozhang; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4881558

Cited by 49 publications

(42 citation statements)

References 32 publications

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“…The early efforts of growing AlGaN nanowires using such large-scale epitaxy tools can be dated back to around 2000, when AlGaN nanowires with low Al contents were first investigated by MBE [46,47]. These early efforts were followed by tremendous efforts from a large number of groups who have been working on the epitaxial growth of AlGaN nanowires (primarily by MBE) [25,28,[48][49][50][51][52][53][54]. In these studies, the AlGaN nanowires are typically spontaneously formed on 2-inch or 3-inch Si substrates under the nitrogen rich conditions, with the help of GaN nanowire template.…”

Section: Mbe and Mocvdmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: Mbe and Mocvdmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…The nanowires were grown under nitrogen rich conditions without using any foreign metal catalyst. [25][26][27] Previous studies have suggested such Al(Ga)N nanowires have N-polarity, which can in subsequence reduce the device operation voltage. 27 Schematically shown in Fig.…”

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confidence: 99%

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

Zhao

Liu

Woo

et al. 2015

Applied Physics Letters

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We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm2 at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

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“…The NW geometry enables the growth of AlN in high crystalline perfection on dissimilar substrates, as mismatch‐induced strain can elastically relax at the free sidewall surfaces of NWs with sufficiently small diameters, whereas, in thicker NWs, dislocation lines are confined to the interface region and do not propagate into the upper part of the NW . The synthesis of AlN NWs has been explored by various techniques but band edge luminescence from self‐assembled AlN NWs has been reported exclusively for the growth by molecular beam epitaxy (MBE) . The self‐assembled formation of AlN NWs is very challenging, and efforts by MBE can be categorized into three different approaches by the type of substrate: 1) Si(001) with a thin SiO 2 layer, 2) Si(111) with a thin Si 3 N 4 layer, and 3) short GaN NW stems on Si(111) .…”

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Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films

Azadmand

Auzelle

Lähnemann

et al. 2020

Physica Rapid Research Ltrs

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Herein, the self‐assembled formation of AlN nanowires (NWs) by molecular beam epitaxy on sputtered TiN films on sapphire is demonstrated. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the NWs are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the NW sidewalls. The high crystalline quality of the NWs is evidenced by the observation of near‐band‐edge emission in the cathodoluminescence spectrum. The key factor for the low NW coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices using these NWs as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.

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Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Cited by 49 publications

References 32 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films

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