Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures

Moïse, T. S.; Guido, L. J.; Beggy, J. C.; Cunningham, Thomas J.; Seshadri, S. R.; Barker, R. C.

doi:10.1007/bf02670931

Cited by 25 publications

(2 citation statements)

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“…The transition energy is therefore measured as a function of a parameter. Four main possibilities have been explored: (1) varying the well width, (2) varying the QW composition, (3) varying the optical excitation power and hence the density of screening charges, [70][71][72][73][74] or (4) applying an external voltage and looking for the flat-band condition, when the PL intensity and transition energy are maximum. 63,[75][76][77] …”

Section: A Determination From Optical Spectramentioning

confidence: 99%

First- and second-order piezoelectricity in III-V semiconductors

2011

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We present the results of first-principles plane-wave pseudopotential calculations of piezoelectric coefficients of first and second order for a total of nine III-V binary phases (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb) of zinc-blende semiconductors. These coefficients are used to calculate the piezoelectric fields for [111]-oriented quantum wells (QWs) with different well-barrier combinations and various dimensions. We derive an approximate analytic expression for the strain tensor in the case of pseudomorphic growth along an arbitrary growth direction. Together with the piezoelectric coefficients, this allows a simple calculation of the piezoelectric field up to second order in strain for an arbitrary growth direction and any material combination within the nine III-Vs presented here. Nonlinear contributions to the polarization are shown to be of significant magnitude for all the materials presented. In some cases the field is increased by the second-order terms; in some cases it is decreased. We analyze the chemical trends of the obtained coefficients. We compare our results to available experiments and find good agreement in one-third of the cases, while for the remaining cases the calculated field is larger to significantly larger than in the measurements. We discuss the popular experimental techniques and highlight possible reasons for the discrepancies.

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Section: A Determination From Optical Spectramentioning

confidence: 99%

First- and second-order piezoelectricity in III-V semiconductors

2011

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“…Here, F is the magnitude of the piezoelectric field in the strained InGaAs layer, and it is given by the equation [10]: In addition, we have taken into account the strain effects to evaluate the total potential energy. The following equations [11] where A c is the deformation potential, y is the In concentration in the QW, and e ii are the strain-tensor elements.…”

Section: Al033ga067asmentioning

confidence: 99%

A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs

Sghaier¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall device grown on (111) GaAs substrate, with the objective of improving its performances. From self-consistent calculations, we find that the electron concentration n s in the interface region is enhanced. This implies that one can have a wider spacer layer and still have the same n s with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors, where it is desirable to have a low electron concentration and high mobility.

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