2009
DOI: 10.1002/pssa.200881294
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Optical properties of thick metal nanohole arrays fabricated by electron‐beam and nanosphere lithography

Abstract: Optically thick metallic nanohole structures were fabricated using two different methods – electron‐beam and nanosphere lithography. The nanosphere lithography technique was based on self‐assembling of polystyrene or silica nanospheres (0.560–1.25 μm in diameter) followed by the deposition of a silver film. The holes size and periodicity of the patterns as well as optical properties (transmission and reflection in the Visible–NIR) of the structures were investigated. The extraordinary optical transmission (EOT… Show more

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Cited by 18 publications
(12 citation statements)
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“…This configuration brings a highly porous, high‐surface‐area, 3D‐interconnected morphology with optimized pore sizes. To fabricate such structures, top‐down methods of lithography‐related techniques, electrochemical etching, and laser‐induced etching have been reported. Bottom‐up methods such as electrochemical/electroless deposition, and additive manufacturing (i.e., 3D printing) can also be used.…”
Section: Discussionmentioning
confidence: 99%
“…This configuration brings a highly porous, high‐surface‐area, 3D‐interconnected morphology with optimized pore sizes. To fabricate such structures, top‐down methods of lithography‐related techniques, electrochemical etching, and laser‐induced etching have been reported. Bottom‐up methods such as electrochemical/electroless deposition, and additive manufacturing (i.e., 3D printing) can also be used.…”
Section: Discussionmentioning
confidence: 99%
“…Positive resists are typically employed for liftoff; and if the metal to liftoff is too thick (e.g., >100 nm), a double layer stack, such as PMMA/P(MMA-MAA), 1 PMMA/LOR, 2 and high molecular weight PMMA/low molecular weight PMMA, 3 can be used to give an undercut profile that facilitates a clean liftoff. However, for lifting off some structures such as nanoscale trenches or holes, a negative resist is preferred as it offers far less exposure time than positive resist (yet a complicated double liftoff process can be utilized with a positive resist for such structures 4 ).…”
Section: Introductionmentioning
confidence: 99%
“…For some applications such as the fabrication of hole arrays in a film of Au, liftoff is the only option for pattern transfer since Au cannot be etched by reactive ion etching (RIE). Then negative resist would offer substantially shorter exposure time in the liftoff process, except when using a complicated 'resist tone reversal' process [1]. Bilenberg et al have selected four negative EBL resists and compared their performance: calixarene (Tokuyama Corp), ma-N 2401 (Microresist Technology), SU-8 (Microchem Corp) and mr-L 6000 (Microresist Technology) [2].…”
Section: Introductionmentioning
confidence: 99%