Optical Properties of Thin Amorphous Silicon Film on a Phase Shift Mask for 157 nm Lithography

Abstract

We report a detailed quantum oscillation study of the overdoped cuprate Tl 2 Ba 2 CuO 6+δ at two different doping levels (T c = 10 and 26 K). The derived Fermi surface size and topology complement earlier angle-dependent magnetoresistance studies and confirm the existence of a large quasi-cylindrical hole-doped Fermi surface with a small, but finite, c-axis warping. An accurate determination of the hole concentration reveals that superconductivity in Tl 2 Ba 2 CuO 6+δ does not follow the universal T c ( p) parabola for cuprate families and survives up to a larger doping of p c = 0.31. The observation of quantum oscillations for both dopings demonstrates that Fermi liquid behaviour is not confined to the edge of the superconducting dome, but is robust up to at least 0.3T max c . Moreover, the observation of such well-resolved oscillations implies that the physical properties of overdoped Tl 2 Ba 2 CuO 6+δ are determined by a single, spatially homogeneous electronic ground state. Finally, analysis of the different quasiparticle masses points towards a purely magnetic or electronic pairing mechanism.

High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

“…Figure 4a-d highlights the narrow scan of Si 2p, O 1s, N 1s, and C 1s core levels for the SiO x N y films deposited at the substrate temperatures of 70 and 120 • C. In Figure 4a, the peak of the Si 2p core level for the SiO x N y films deposited at 70 • C was located at 103.8 eV, while that of the film deposited at 120 • C shifted to 103.5 eV, which corresponded well to the Si-O-Si chemical bond in the SiO x matrix [22,23]. The shift of the Si 2p peak toward a higher binding energy for the SiO x N y films deposited at 70 • C was attributed to the signal that emerged from the Si atoms, which was surrounded by the undissociated oxygen molecule (i.e., oxygen-rich condition) [24,25]. Moreover, the additive area at the lower binding energy for the SiO x N y films deposited at 120 • C could be ascribed to the existence of the N-Si-O bond originating from the nitrogen atom in substitution for the oxygen atom in the O-Si-O networks, since the peak of the Si 3 N 4 was known to be in the low binding energy of 101.6-102.1 eV [26][27][28].…”

“…Coatings 2019, 9, x FOR PEER REVIEW 6 of 15 of the Si 2p peak toward a higher binding energy for the SiOxNy films deposited at 70 °C was attributed to the signal that emerged from the Si atoms, which was surrounded by the undissociated oxygen molecule (i.e., oxygen-rich condition) [24,25]. Moreover, the additive area at the lower binding energy for the SiOxNy films deposited at 120 °C could be ascribed to the existence of the N-Si-O bond originating from the nitrogen atom in substitution for the oxygen atom in the O-Si-O networks, since the peak of the Si3N4 was known to be in the low binding energy of 101.6-102.1 eV [26][27][28].…”