Abstract:In this work it is presented a methodology, based on optical properties, to determine the hydrogen concentration contained in films of a-Si: H and aGe: H. Moreover, it is shown that the film properties depend heavily on the composition and level of hydrogenation. The number of hydrogen atoms in the films were varied by changing trains and gas mixture measured infrared absorption for films of a-Si: H and aGe: H also defined width of forbidden zone E0 for these films. In the work of the IR absorption spectra are… Show more
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