Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering

Chen, Hạixia; Ding, Jijun; Shi, Feng; Li, Yingfeng; Guo, Wenge

doi:10.1016/j.jallcom.2012.04.064

Cited by 48 publications

(21 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Doping induces drastic changes in its optical, electrical and magnetic properties by modifying its electronic structure. [11][12][13] Different methods have been used for the synthesis of doped ZnO such as laser ablation, 14 magneton sputtering, 15 high temperature calcinations, 16 sol-gel, 17 hydrothermal 18 and sonochemical methods 19 . Among these techniques, sonochemical method has attracted much attention.…”

Section: Introductionmentioning

confidence: 99%

Surfactant Assisted Sonochemical Synthesis and Characterization of Gadolinium Doped Zinc Oxide Nanoparticles

Khajuria¹,

Ladol²,

Singh³

et al. 2015

ACSi

View full text Add to dashboard Cite

Pure and Gd doped Zinc Oxide (ZnO) nanoparticles were synthesized by sonochemical method using different surfactants (PVP/CTAB). The nanoparticles were characterized by powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), particle size analysis by DLS technique and UV-Visible spectroscopy. The effect of Gd doping and nature of surfactants on crystallite size, morphology and band gap of ZnO nanoparticles have been investigated. In addition to this, the effect of nature of surfactant on amount of dopant inserted in the ZnO lattice was also studied.

show abstract

Section: Introductionmentioning

confidence: 99%

Surfactant Assisted Sonochemical Synthesis and Characterization of Gadolinium Doped Zinc Oxide Nanoparticles

Khajuria¹,

Ladol²,

Singh³

et al. 2015

ACSi

View full text Add to dashboard Cite

show abstract

“…The insets of Fig. 30,31 In addition, Ti-doped ZnO lms prepared using sputtering and sol-gel techniques also exhibited improved surface roughness, verifying that incorporating ZnO with Ti doping can yield smooth thin-lm surfaces and dense microstructures. According to AFM analysis of the thin lms, the surface roughness values were 1.21, 0.67, and 0.60 nm for the ZnO, GZO, and GTZO, respectively.…”

Section: Resultsmentioning

confidence: 78%

“…4 show 3D-AFM images of the ZnO, GZO, and GTZO thin lms deposited using RF magnetron sputtering on glass substrates. 30,31 By incorporating titanium doping into the ZnO material, the roughness of a GTZO layer was reduced, achieving lms substantially denser and smoother compared with undoped ZnO and GZO lms. The improved surface atness of GZO can be ascribed to the surfactant effect caused by Ga doping; this is consistent with a previous study that reported a reduced surface roughness from 20.8 to 3.2 nm as the Ga concentration was increased from undoped to 8%.…”

Section: Resultsmentioning

confidence: 99%

Enhancing transparent thin-film transistor device performances by using a Ti-doped GaZnO channel layer

Liu

Wang

2015

RSC Adv.

View full text Add to dashboard Cite

This study improved the performances of a thin-film transistor (TFT) device with n-type Ti-doped GaZnO (GTZO) as the channel layer. Various O 2 /Ar ratios were used during radio-frequency magnetron sputtering deposition to modify the carrier concentration and the thin-film surface flatness. Atomic force microscopy results indicate that the lowest surface roughness (0.38 nm) was observed in the GTZO films fabricated at an O 2 /Ar ratio of 12/30 sccm. In addition, a room-temperature X-ray diffraction and photoluminescence study verified the improved crystal quality and decreased oxygen vacancies as the O 2 /Ar ratio increased. The GTZO films fabricated at an O 2 /Ar gas flow of 6/30 sccm were adopted as the transistor channel layer of a TFT, which exhibited an improved carrier mobility of 16.1 cm 2 V À1 s À1 , a subthreshold swing of 0.43 V dec À1 , an off current of 5.6 Â 10 À13 A, and an on-off current ratio of 2.2 Â 10 8 . From the comparison of transfer characteristic curves for the TFTs with channels of ZnO, indium gallium zinc oxide, and GTZO in this study, the GTZO TFTs exhibit superior characteristics which demonstrated the potential for high-performance optoelectronic device applications.

show abstract

“…Impurity-doping in semiconductors with selective elements greatly affects their optical, electrical, and magnetic properties [2]. Lots of research groups carried out doping of ZnO thin films, Al [3], Cu [4], Mg [5], Ti [6], Mn [7,8], etc. in order to improve crystallization quality or obtain better optical, electrical, or ferromagnetic properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate on structural and transport properties of sprayed Fe:ZnO polycrystalline thin films

et al. 2014

View full text Add to dashboard Cite

ZnO thin films doped with iron have been grown by spray pyrolysis technique on glass and fused silica substrates in order to study the effect of substrate material on the structural, optical, and electro-magnetotransport properties of grown layers. The polycrystalline Fe:ZnO films have different growth orientation according to the substrate, though both films are highly transparent in the visible region of wavelength. The sample grown on glass substrate has larger magnetoresistance and lower electron mobility than that on fused silica substrate.

show abstract

Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering

Cited by 48 publications

References 22 publications

Surfactant Assisted Sonochemical Synthesis and Characterization of Gadolinium Doped Zinc Oxide Nanoparticles

Surfactant Assisted Sonochemical Synthesis and Characterization of Gadolinium Doped Zinc Oxide Nanoparticles

Enhancing transparent thin-film transistor device performances by using a Ti-doped GaZnO channel layer

Effect of substrate on structural and transport properties of sprayed Fe:ZnO polycrystalline thin films

Contact Info

Product

Resources

About