Optical Properties of Tin Telluride in the Visible and Infrared Regions

Schoolar, R. B.; Dixon, Jack R.

doi:10.1364/josa.58.000119

Cited by 28 publications

(12 citation statements)

References 18 publications

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“…Schoolar and Dixon 11 have shown that both the magnitude and energy dependence of this absorption at room temperature are in good agreement with values calculated using classical free-carrier dispersion theory, and values of the optical mobility and electric-susceptibility mass determined from reflectivity measurements. 14 Figure 3 shows the temperature dependence of the dispersion of the refractive index.…”

Section: Optical Propertiessupporting

confidence: 74%

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Temperature Dependence of the Optical Absorption Edge ofp-Type SnTe

Burke¹,

Riedl²

1969

Phys. Rev.

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The optical-absorption coefficient and index of refraction of SnTe were measured at 300, 77, and 12°K over the photon energy range between 0.14 and 0.64 eV. The specimen was a single-crystal SnTe film with a hole concentration of 3.6X10 19 cm -3 . The threshold of absorption by bound carriers at 12°K occurs at a photon energy less than 0.38 eV. This suggests that the smallest direct gap is considerably less than the gap of 0.30 eV which Esaki and Stiles have deduced from tunneling measurements. In contrast to the temperature dependence of the tunneling gap, the temperature dependence of the absorption edge suggests that the temperature coefficients of the direct gaps that lie in the photon energy range investigated are positive. However, these coefficients decrease rapidly with decreasing photon energy, suggesting that direct gaps between states sufficiently close to the band edge will have negative temperature coefficients. The electricsusceptibility effective mass was also determined. Its variation from 0.066w 0 at 300°K to 0.057wo at 12°K is consistent with the observation of direct gaps having positive temperature coefficients. We propose new features for the band structure of SnTe which account for these results, as well as previously reported results for the PbTe-SnTe alloy system.

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Section: Optical Propertiessupporting

confidence: 74%

“…[10][11][12][13][14]. The electric-susceptibility effective mass is surprisingly small for material having this many carriers, and it decreases with decreasing hole concentration.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of the Optical Absorption Edge ofp-Type SnTe

Burke¹,

Riedl²

1969

Phys. Rev.

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“…A very slight improvement is seen with decreasing tellurium and increasing sulphur content. From other published work, this was to be expected since SnTe is reported to be opaque through the infrared [8]. Reflection measurements suggest that the films are highly reflective, possibly making them suitable for long wave attenuation.…”

Section: Tin Sulphotelluride Snstementioning

confidence: 67%

Investigation of Sn-Based Alternatives to Cadmium in Thin Film Coatings

Wakeham

Hawkins

Henderson

et al. 2007

Optical Interference Coatings

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“…Il a 6t6 montr6 que le SnTe peut 8tre 6pitaxi6 sur un substrat de meme structure cristalline (NaCI) par une technique d'6vaporation thermique [5]. Ses propri6t6s optiques ainsi qu'un grand nombre de ses propri6t6s electriques ont 6t6 6tudi6es [6,7].…”

Section: Introductionunclassified

Mesure des hauteurs de barrière dans les hétérojonctions pSnTe-nCdTe

Kane

Cohen‐Solal

1986

J. Phys. France

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Optical Properties of Tin Telluride in the Visible and Infrared Regions

Cited by 28 publications

References 18 publications

Temperature Dependence of the Optical Absorption Edge ofp-Type SnTe

Temperature Dependence of the Optical Absorption Edge ofp-Type SnTe

Investigation of Sn-Based Alternatives to Cadmium in Thin Film Coatings

Mesure des hauteurs de barrière dans les hétérojonctions pSnTe-nCdTe

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