Optical properties of TlGaxIn1−xS2 layered mixed crystals (0≤x≤1) I. Composition- and temperature-tuned energy band gap

Gasanly, Nizami

doi:10.1016/j.jallcom.2010.03.137

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…TlInS 2 and TlGaS 2 form a continuous series of TlGa x In 1−x S 2 (0 ≤ x ≤ 1) mixed crystals. The optical properties of the TlGa x In 1−x S 2 crystals have been studied by means of transmission and reection measurements in the wavelength range of 400 1100 nm [11,12]. The optical indirect band gap energies were determined through the analysis of the absorption data.…”

Section: Introductionmentioning

confidence: 99%

Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤ 1)

Isik

Gasanly²,

Korkmaz³

2014

Acta Phys. Pol. A

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The infrared transmittance and Raman scattering spectra in TlGaxIn1−xS2 (0 ≤ x ≤ 1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 4002000 and 250400 cm −1 , respectively. The bands observed at room temperature in IR transmittance spectra of TlGaxIn1−xS2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR-and Raman-active modes on the composition of TlGaxIn1−xS2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diraction measurements and compositional dependence of lattice parameters was revealed.

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Section: Introductionmentioning

confidence: 99%

Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤ 1)

Isik

Gasanly²,

Korkmaz³

2014

Acta Phys. Pol. A

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“…[3][4][5][6][7][8][9][10] It was revealed that the fundamental absorption edge is formed by indirect transitions with band gap energies E gi ¼ 1.98 and 2.06 eV (TlGaSe 2 ) and E gi ¼ 2.27 and 2.44 eV (TlInS 2 ) at T ¼ 300 and 10 K, respectively. 11,12 A high photosensitivity in the visible range, high birefringence in conjunction with a wide transparency range of 0.6-16 lm make these crystals useful for optoelectronic applications. 10 Earlier, we studied the low-temperature photoluminescence (PL) of ternary TlGaSe 2 and TlInS 2 crystals and observed one and two broad emission bands, respectively, which were assigned to donoracceptor pair (DAP) recombination.…”

Section: Introductionmentioning

confidence: 99%

Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals

Gasanly

2013

Journal of Applied Physics

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Photoluminescence spectra of Tl 2 GaInSe 2 S 2 layered crystals have been registered in the temperature range of 17-62 K and in the wavelength region of 525-690 nm. A broad visible photoluminescence band centered at 590 nm (2.10 eV) was observed at T ¼ 17 K. Variation of emission band has been studied as a function of laser excitation intensity in the 0.1-55.7 mW cm À2 range. The analysis of the spectra reveals that the peak energy position changes with excitation intensity (blue shift). The radiative transitions from moderately deep donor level to shallow acceptor level were suggested to be responsible for the observed band. From X-ray powder diffraction study, the parameters of monoclinic unit cell of Tl 2 GaInSe 2 S 2 were determined. V C 2013 American Institute of Physics. [http://dx.

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“…These crystals are useful for optoelectronic applications as they have high photosensitivity in the visible range of the spectra and high birefringence in conjunction with a wide transparency range of 0.5-14.0 m [3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals

Küçük

Yıldırım²,

Gasanly

et al. 2010

Journal of Alloys and Compounds

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Optical properties of TlGaxIn1−xS2 layered mixed crystals (0≤x≤1) I. Composition- and temperature-tuned energy band gap

Cited by 7 publications

References 22 publications

Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤ 1)

Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤ 1)

Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals

Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals

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