Optical properties of tungsten oxide thin films by non-reactive sputtering

Acosta, M.; González, David; Riech, I.

doi:10.1016/j.tsf.2009.01.090

Cited by 33 publications

(21 citation statements)

References 20 publications

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“…Figure shows the apparent color of as‐deposited tungsten oxide thin films varied with different Ar pressures. It is clear that the apparent color of the as‐deposited tungsten oxide thin films changed from deep blue (0.4 Pa) to light blue (0.8, 1.2, and 1.6 Pa) and then to absolutely transparent (2.0 Pa), exhibiting the same trend described in the study by Acosta et al, meaning that the tungsten oxide thin film was substoichiometric and the O/W ratio could be easily regulated by Ar pressure during sputtering. This phenomenon can be due to the changes in the migration of sputtered species in argon atmosphere .…”

Section: Resultssupporting

confidence: 76%

“…In addition to that, Acosta et al also found another interesting phenomenon, that, using this kind of oxide target, the O contents of tungsten oxide thin films could be directly changed with varied Ar pressure during sputtering . In their works, the film deposited at Ar pressure less than 2.67 Pa showed deep blue color and was conductive at the O/W ratio of 2.5–2.7; when the Ar pressure increased from 2.67 to 6 Pa or higher, the film was insulative and the color changed from light blue to transparent with the O/W ratio higher than 2.7. However, it is regrettable that their previous works have no link to the EC properties, as reviewed by Zhu and co‐workers .…”

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

Direct Regulation of O/W Stoichiometric Ratio and Microstructure in Tungsten Oxide Electrochromic Films by Ar Pressure Using Oxide Target Sputtering

Zhao

Yang

et al. 2020

Physica Status Solidi (a)

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Herein, amorphous tungsten oxide electrochromic (EC) films are successfully prepared by radiofrequency (RF) magnetron sputtering in pure Ar atmosphere using an oxide target. The effect of Ar pressure on the apparent color, deposition rate, crystal structure, O/W ratio, surface morphology, and EC properties of the as‐deposited tungsten oxide films is systematically investigated using spectroscopic ellipsometry, X‐ray photoelectron spectroscopy, X‐ray diffraction, scanning electron microscopy, and cyclic voltammetry. Interestingly, the Ar gas pressure plays a key role in regulating the O/W ratio, microstructure, and EC properties of the obtained tungsten oxide films. The films are all substoichiometric, and the O/W ratio changes from 2.79 to 2.89 with the increase in Ar pressure. In addition, the loose surface microstructure is shown as Ar pressure increases. The tungsten oxide films deposited at the Ar gas pressure of 1.2 Pa reaches the deposition rate of 13.0 nm min−1, the largest optical modulation of 71.2% at 550 nm, and the EC efficiency of 51.3 cm2 C−1. This film also reveals excellent electrochemical stability and sustains more than 200 cycles. These results provide a simple solution for preparing high‐quality tungsten oxide EC films using oxide ceramic targets in pure Ar atmosphere.

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Section: Resultssupporting

confidence: 76%

Section: Introductionmentioning

confidence: 96%

Direct Regulation of O/W Stoichiometric Ratio and Microstructure in Tungsten Oxide Electrochromic Films by Ar Pressure Using Oxide Target Sputtering

Zhao

Yang

et al. 2020

Physica Status Solidi (a)

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show abstract

“…The optical band gap of the films decreased from 3.65 to 3.50 eV with the increase of sputtering power from 80 to 200 W. The low value of optical band gap of the films formed at high sputtering power was due to the formation of substoichiometric films. In the literature, it was noticed that these results are good agreement with anatase TiO 2 band gap of 3.71 eV [23]. The rutile phase TiO 2 band gap was 3.30 eV.…”

Section: Resultssupporting

confidence: 74%

Structural, Dielectric and Optical properties of Sputtered TiO2 nano-films

Thaidun¹

2013

IOSR-JAP

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“…As has been observed from the XRD patterns and HREM micrographs, Ti:WO 3 subsequent variations in optical gap displayed in Fig. 6b can be attributed [40,41] to the decreasing number of oxygen vacancies. It is important to remark, however, that also the observed shifts might be a consequence of the coexistence of polycrystalline and amorphous phases observed in micrograph displayed in Fig.…”

Section: Optical Propertiesmentioning

confidence: 68%