Optical Properties of ZnO and Related Compounds

Bundesmann, Carsten; Schmidt‐Grund, Rüdiger; Schubert, Mathias

doi:10.1007/978-3-540-73612-7_3

Cited by 47 publications

(30 citation statements)

References 162 publications

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“…The BTO and ZnO layers were highly textured polycrystalline ͓BTO with ͑111͒ and ZnO with ͑0001͒ texture͔. Electrical Hall-effect, infrared ellipsometry, 8 and our dielectric continuum model analysis 13 obtained that the ZnO layer is n-type conductive, with free electron concentration N c Ϸ 5.5ϫ 10 16 cm −3 , while the BTO layer is highly resistive. The current-voltage ͑I-V͒ measurements were recorded at different sweeping ͑maximum͒ voltages ͑V max ͒.…”

Section: -13mentioning

confidence: 90%

“…[5][6][7] ZnO received substantial attention due to its wide spectral transparency and the strongly excitonic, direct fundamental electronic band-toband transition in the ultraviolet region, 8 for example. Under typical growth conditions ZnO crystallizes in the piezoelectric wurtzite-structure phase, and therefore possesses an irreversible spontaneous polarization P sz .…”

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confidence: 99%

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Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Voora

Hofmann

Schubert³

et al. 2009

Applied Physics Letters

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Section: -13mentioning

confidence: 90%

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confidence: 99%

Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Voora

Hofmann

Schubert³

et al. 2009

Applied Physics Letters

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“…Usually ZnO adopts a hexagonal (wurtzite) crystal structure and presents n-type conductivity due to residual donors [1][2][3][4]. It is an interesting material for short-wavelength optoelectronic applications owing to its wide band gap 3.37 eV [5][6][7], large bond strength, large exciton binding energy (60 MeV) at room temperature, non toxic and abundant in nature [8][9][10][11][12][13]. Several techniques have been used for the preparation of ZnO thin films, such as sputtering, chemical vapor deposition (MOCVD), pulsed laser ablation (PLD), molecular beam epitaxy (MBE), electrochemical deposition, pyrolysis spray, reactive evaporation, colloidal and sol-gel method [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

et al. 2018

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We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500• C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (Ω C m) −1 .

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“…ZnO is still a challenge [2]. However, p-type doping in ZnO may be possible by substituting either group-I elements (Li, Na, K, etc.)…”

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confidence: 99%

“…For n-type [2][3][4]7,8,39], doping with group-III elements (B, Al, Ga, In), as substitutional elements for Zn, has been attempted by many groups, resulting in high-quality, optically transparent, and highly conductive ZnO films as this substitution of divalent Zn 2+ by a trivalent ion generates an excessive free electron. Especially, Al-doped ZnO (AZO) thin films have attracted a considerable amount of interest due to their good electrical conductivity with reasonably low optical loss [46].…”

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confidence: 99%

AZO Thin Films by Sol-Gel Process for Integrated Optics

et al. 2013

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Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC) of the (002) direction (TC (002) ≈ 3). The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Scanning Electronic Microscopy (SEM). Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm).

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Optical Properties of ZnO and Related Compounds

Cited by 47 publications

References 162 publications

Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

AZO Thin Films by Sol-Gel Process for Integrated Optics

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