Optical Properties of ZnO/ZnS and ZnO/ZnTe Heterostructures for Photovoltaic Applications

Schrier, Joshua; Demchenko, D. O.; Wang, Lin‐Wang; Alivisatos, A. Paul

doi:10.1021/nl071027k

Cited by 416 publications

(304 citation statements)

References 56 publications

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“…---- There have been numerous attempts and models to predict and calculate the electronic structures and properties of type-II heterostructures [20,23,[38][39][40]. To date, the reported type-II heterostructures are mainly based on II-VI and III-V binary semiconductors, such as ZnO/ZnS [41], ZnO/ZnSe [42], ZnO/ZnTe [23], CdSe/CdTe [43], and GaN/GaP [20], as shown in Table 1.…”

Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

“…To date, the reported type-II heterostructures are mainly based on II-VI and III-V binary semiconductors, such as ZnO/ZnS [41], ZnO/ZnSe [42], ZnO/ZnTe [23], CdSe/CdTe [43], and GaN/GaP [20], as shown in Table 1. Among them, ZnO-based heterostructures attracted more attentions due to its abundant resources and facilitating growth [44].…”

Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

“…Among them, ZnO-based heterostructures attracted more attentions due to its abundant resources and facilitating growth [44]. For instance, J. Schrier et al have theoretically analyzed the electronic structures and optical properties of ZnO/ZnS and ZnO/ZnTe [23], and revealed low absorption limitation of 2.07 eV and 1.17 eV, respectively. The simulation results for other type-II heterostructures are also listed in Table 1.…”

Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

“…As for type-II heterojunction, it can function similarly as a p-n junction, but without having to deliberately dope the nanowire. In addition, type-II heterojunction can also substantially reduce bandgap indirectly in spatial to efficiently absorb the sun light, although both materials constituting heterostructure have wider bandgaps [20,23]. Such heterojunctions have been intensively investigated for photovoltaic applications, including dye-sensitized solar cell (DSSC) [24,25], quantum dot-sensitized solar cell (QDSSC) [12,26], core/shell nanowire solar cells [27,28], and so on [29][30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

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Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

Cao

et al. 2012

Nano-Micro Lett.

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Nanowire-based photovoltaic devices have the advantages over planar devices in light absorption and charge transport and collection. Recently, a new strategy relying on type-II band alignment has been proposed to facilitate efficient charge separation in core/shell nanowire solar cells. This paper reviews the type-II heterojunction solar cells based on core/shell nanowire arrays, and specifically focuses on the progress of theoretical design and fabrication of type-II ZnO/ZnSe core/shell nanowire-based solar cells. A strong photoresponse associated with the type-II interfacial transition exhibits a threshold of 1.6 eV, which demonstrates the feasibility and great potential for exploring all-inorganic versions of type-II heterojunction solar cells using wide bandgap semiconductors. Future prospects in this area are also outlooked.

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Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

Section: Theoretical Design Of Type-ii Heterostructuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

Cao

et al. 2012

Nano-Micro Lett.

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“…1, the materials we investigate are SiO 2 / Si quantum wells, 16 which we compare to recently published theoretical data 17 on coaxial ZnO/ZnS nanowires. These materials have in common that they are all possible candidates as the high band gap partner in a tandem configuration, for instance with crystalline silicon, and that the materials are abundant and nontoxic.…”

Section: Introductionmentioning

confidence: 99%

Efficiency limits of Si/SiO2 quantum well solar cells from first-principles calculations

Kirchartz

Seino

Wagner

et al. 2009

Journal of Applied Physics

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In order to investigate the applicability of new photovoltaic absorber materials, we show how to use first-principles calculations combined with device simulations to determine the efficiency limits of solar cells made from SiO2/Si superlattices and from coaxial ZnO/ZnS nanowires. Efficiency limits are calculated for ideal systems according to the Shockley–Queisser theory but also for more realistic devices with finite mobilities, nonradiative lifetimes, and absorption coefficients. Thereby, we identify the critical values for mobility and lifetime that are required for efficient single junction as well as tandem solar cells.

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Low‐Dimensional Semiconductor Material‐Based Optoelectronic Devices and Their Applications

Retamal

2022

Digital Encyclopedia of Applied Physics

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Over the past three decades, bottom‐up low‐dimensional semiconductor materials became a high class of materials owing to their superior electronic and optical properties than their bulk counterparts. Accordingly, semiconducting nanostructures have gained a great deal of attention as building blocks for multifunctional optoelectronic devices that control all aspects of light, ranging from absorption, propagation, emission to modulation. Therefore, the article gives a comprehensive review of the intriguing properties of distinct nanostructured semiconducting materials ranging from silicon, III–V compounds, metal oxides, halide perovskites, carbon nanotubes to two‐dimensional (2D) transitional metal dichalcogenides. More specifically, we explore the size dependence, quantum‐confinement effects, structural phase, material composition, surface effects, high surface‐to‐volume ratio, radial or axial structures, 2D in‐plane and out‐of‐plane structures, junction type, energy band alignment, and graded refractive index profile, among others. Accordingly, we next look on how to exploit such properties to build high‐performance optoelectronic devices such as solar cells, photodetectors, waveguides, LEDs, and lasers. Special emphasis is given to nanowire‐based plasmonic lasers for their ability to deliver subwavelength coherent light at the nanoscale. Finally, we survey a large number of applications to display the great potential of semiconducting nanostructures toward the next generation of photonic‐integrated circuits and quantum devices.

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Optical Properties of ZnO/ZnS and ZnO/ZnTe Heterostructures for Photovoltaic Applications

Cited by 416 publications

References 56 publications

Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

Efficiency limits of Si/SiO2 quantum well solar cells from first-principles calculations

Low‐Dimensional Semiconductor Material‐Based Optoelectronic Devices and Their Applications

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