Optical properties of β-Ga2O3:Cr3+ single crystals for tunable laser applications

Vivien, D.; Viana, Bruno; Revcolevschi, A.; Barrie, James D.; Dunn, Bruce; Nelson, Phyllis R.; Stafsudd, Oscar M.

doi:10.1016/0022-2313(87)90006-8

Cited by 38 publications

(24 citation statements)

References 4 publications

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“…All measurements were done in this plane at room temperature. 4 T 2 transitions, respectively [11]. Another absorption band is observed at about 300 nm (4.1 eV) just below the band gap.…”

Section: Samplesmentioning

confidence: 97%

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Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor

Wakai

Sinya

Yamanaka

2011

Phys. Status Solidi (c)

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Cr‐doping effects on optical properties of β‐Ga2O3 have been studied in single‐crystalline samples, grown by floating‐zone method. The photoluminescence, which is observed as an intense and broad peak in nominally pure β‐Ga2O3, is found be abruptly suppressed by Cr‐doping. This suppression demonstrates that a small amount of Cr3+ ions acts as non‐radiative centers for photo‐excited carriers. In Cr‐doped β‐Ga2O3 the residual photoluminescence shows UV and green emissions, peaking at about 3.3 eV and 2.4 eV, respectively. The photoluminescence excitation spectrum of the UV peak has a polarization‐dependent maximum at the fundamental absorption edge that is arising from the band‐to‐band excitations. Therefore, the radiative decay channels for photo‐excited carriers partly survive in Cr‐doped β‐Ga2O3. We have also found a Cr‐induced absorption band located just below the fundamental absorption edge (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…All measurements were done in this plane at room temperature. 4 T 2 transitions, respectively [11]. Another absorption band is observed at about 300 nm (4.1 eV) just below the band gap.…”

Section: Samplesmentioning

confidence: 97%

“…It has been reported that doping of Cr 3+ ions into β-Ga 2 O 3 gives rise to a broad photoluminescence band at about 1.8 eV (700 nm) [10][11][12][13]. This red luminescence originates from d-d transitions in doped Cr 3+ ions.…”

mentioning

confidence: 97%

Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor

Wakai

Sinya

Yamanaka

2011

Phys. Status Solidi (c)

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“…about 258 nm, corresponding to the theoretical value, so the 225 nm bands absorption is attributed to the intrinsic transition from valence band to conduction band. Since 418 and 595 nm absorption bands were not observed in pure β -Ga 2 O 3 crystals [4] , it is concluded that these two absorption bands, as have been described by Vivien [2] , are related to Cr 3+ . The 418 nm (23923 cm −1 ) and 595 nm (16807 cm −1 ) absorption bands must be assigned to 4 A 1 → 4 T 2 transition and 4 A 2 → 4 T 2 transition.…”

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confidence: 95%

“…In addition, β-Ga 2 O 3 single crystals are good GaN substrate due to their good chemical and mechanical properties [1] . However, there were only a few reports on the application of β-Ga 2 O 3 for tunable laser [2,3] .…”

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confidence: 99%

Single crystal β-Ga2O3: Cr grown by floating zone technique and its optical properties

Zhang

夏长泰

et al. 2007

SCI CHINA SER E

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β-Ga 2 O 3 : Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in β-Ga 2 O 3 crystals Cr 3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr 3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from 4 T 2 to 4 A 2 . The studies manifest that the β-Ga 2 O 3 crystals have the potential application for tunable laser.β-Ga 2 O 3 : Cr single crystals, floating zone technique, tunable laser, spectrum.β-Ga 2 O 3 single crystal belongs to the monoclinic system with space group C2/m, and the lattice parameters are a=12.23 Å, b=3.04 Å and c=5.80 Å, β=103.83°. The crystal structure is composed of distorted [GaO 4 ] tetrahedra and [GaO 6 ] octahedra. An octahedron shares edges with adjacent octahedra composing double octahedral chains mainly parallel along b-axis of the lattice. A tetrahedron only shares corners with other tetrahedra and octahedra. By this way tetrahedron connects the two octahedral chains. β-Ga 2 O 3 single crystal is a semiconductor since free carriers can move along the octahedral chains. Many researchers focused on it due to its special UV properties among the transparent conducting oxides (TCO): The cutoff absorption edge of β-Ga 2 O 3 is shorter than any other TCOs, so it is transparent up to deep UV. In addition, β-Ga 2 O 3 single crystals are good GaN substrate due to their good chemical and mechanical properties [1] . How-

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“…The GO melt always crystallizes in the bGO form. Part of Ga atoms in the bGO structure [23,24] are located in octahedrally coordinated sites, and chromium impurity atoms (Cr 3+ ions) rather easily replace gallium in these sites. The luminescence spectrum of Cr-activated bGO at a temperature about 77 K consists of two narrow bands of comparable intensity at the wavelength k 688 and 695 nm.…”

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confidence: 99%

Luminescence spectra of chromium-doped LiGaO2 crystals as indicator of their phase heterogeneity

Meylman

2006

Optical Materials

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Optical properties of β-Ga2O3:Cr3+ single crystals for tunable laser applications

Cited by 38 publications

References 4 publications

Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor

Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor

Single crystal β-Ga2O3: Cr grown by floating zone technique and its optical properties

Luminescence spectra of chromium-doped LiGaO2 crystals as indicator of their phase heterogeneity

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Optical properties of β-Ga2O3:Cr3+ single crystals for tunable laser applications

Cited by 38 publications

References 4 publications

Effect of Cr3+ ions on optical properties in β‐Ga2O3 semiconductor

Effect of Cr3+ ions on optical properties in β‐Ga2O3 semiconductor

Single crystal β-Ga2O3: Cr grown by floating zone technique and its optical properties

Luminescence spectra of chromium-doped LiGaO2 crystals as indicator of their phase heterogeneity

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Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor

Effect of Cr³⁺ ions on optical properties in β‐Ga₂O₃ semiconductor