Optical property and pseudogap study of FeSe thin films on different substrates

Wang, Yueming; Lian, Jie; Wei, Mingyang; Shi, Yujun; Jin, Kui; Wang, Chenlin; Xu, Zhen; Zhou, Xiang'an; Li, Yongfu

doi:10.1016/j.optmat.2022.112727

Cited by 16 publications

(3 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[6] In a study that targeted deposition of iron selenide FeSe 2 thin films by the pulsed laser deposition technique onto CaF 2 , LiF, and SrTiO 3 substrates, crystalline iron monoselenide phase was formed. [7] This compound exhibited low dielectric constant of value of 3.2 and 1.2 in the infrared and ultraviolet ranges of light, respectively. [7] In another work it was possible to engineer the structural, optical, and electrical properties by varying the potential of the electrodeposition in the range from −0.70 to −1.30 V. [8,9] The films exhibited wide variety in the refractive index value based on the growth potential.…”

Section: Introductionmentioning

confidence: 97%

“…[7] This compound exhibited low dielectric constant of value of 3.2 and 1.2 in the infrared and ultraviolet ranges of light, respectively. [7] In another work it was possible to engineer the structural, optical, and electrical properties by varying the potential of the electrodeposition in the range from −0.70 to −1.30 V. [8,9] The films exhibited wide variety in the refractive index value based on the growth potential. [8,9] In our previous investigation we have shown that FeSe 2 thin films deposited by the thermal evaporation technique are of amorphous nature.…”

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

Gaabour,

Qasrawi,

Alharbi

2024

Cryst. Res. Technol.

View full text Add to dashboard Cite

Herein stacked layers of iron selenide (FeSe2) thin films are deposited by the physical evaporation technique and thermally annealed. An in situ monitoring of the crystallinity during the annealing process has shown that the crystallinity is reached at 100 °C. The crystallinity of the films that preferred the orthorhombic phase is enhanced with increasing annealing temperature. Evidences about the improved crystallinity are presented by the increased crystallite and grain sizes, decreased microstrain values, decreased stacking faults, and decreased defect densities with increasing annealing temperature. Optical investigations have shown impressive effect of the annealing process on the optical reflectance, optical contrast, and light absorbability. Namely, respective improvement percentages exceeding 170%, 64%, and 140% is achieved near E≈2 eV for samples annealed at 200 °C for 20 min. Both direct and indirect optical transitions are dominant in the film. In addition the annealing increased the dielectric constant in the spectral range of 1.17–4.20 eV. Maximum dielectric enhancement by 214% is reached near ≈2.10 eV. Moreover, the annealing process increases the optical conductivity and drift mobility of the FeSe2 films. The improvement in the crystallinity that resulted in enhanced optical properties makes the thermally annealed FeSe2 films promising for optoelectronic technology applications.

show abstract

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 97%

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

Gaabour,

Qasrawi,

Alharbi

2024

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…[5] In another work coating iron selenide thin films onto SrTiO 3 , LiF, and CaF 2 substrates resulted in a shift in the superconducting transition temperatures from 5.4 to 10.91, and 11.44 K, respectively. [6] In addition coating of iron selenide onto Nb substrates enhanced its superconductivity and make it suitable as superconducting radio-frequency cavities that are usually used in accelerators. [7] Moreover interaction between Pb substrates with iron selenide and lead selenide induced the superconductivity of FeSe.…”

Section: Introductionmentioning

confidence: 99%

Pb/FeSe Interfaces Designed for Optical Communication Technology

Alharbi,

Qasrawi,

Algarni

2023

Cryst. Res. Technol.

View full text Add to dashboard Cite

Herein, thin films of FeSe are coated onto glass and semitransparent Pb substrate of thicknesses of 200 nm. The produced glass/FeSe (GFS) and Pb/FeSe (PFS) are structurally, compositionally, and optically characterized. It is observed that Pb substrates induced the crystallinity of cubic FeSe and cubic PbSe. On average, 21% of the phases in FeSe films are identified as PbSe. Due to the strong orbital overlapping between Pb and FeSe, Pb substrate increases the light absorption, the dielectric constant, the optical conductivity, and the terahertz cutoff frequency by ≈150 %, 180 %, 263 %, and 101 %, respectively. In addition the direct and indirect energy bandgaps shrink from 2.49 and 2.80 to 2.41 and 2.50 eV, respectively. Moreover, treating GFS and PFS as terahertz optical resonators have shown that Pb substrates enhanced the drift mobility and increased the plasmon frequency making it adequate for 6G technology applications. An important feature of the PFS optical resonator is the stability of the terahertz cutoff frequency at 16 THz in the visible range of light. This feature together with the enhanced optical absorption in the visible light region makes the PFS films attractive for visible light communication technology.

show abstract

Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

Guler,

Isik,

Gasanly

2024

Appl. Phys. A

View full text Add to dashboard Cite

Optical property and pseudogap study of FeSe thin films on different substrates

Cited by 16 publications

References 57 publications

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

Pb/FeSe Interfaces Designed for Optical Communication Technology

Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

Contact Info

Product

Resources

About

Optical property and pseudogap study of FeSe thin films on different substrates

Cited by 16 publications

References 57 publications

In Situ Monitoring of Crystallinity of FeSe2 Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

In Situ Monitoring of Crystallinity of FeSe2 Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

Pb/FeSe Interfaces Designed for Optical Communication Technology

Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

Contact Info

Product

Resources

About

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

In Situ Monitoring of Crystallinity of FeSe₂ Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties