2002
DOI: 10.1109/lpt.2002.1022022
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Optical pump-probe measurements of the latency of silicon CMOS optical interconnects

Abstract: Abstract-We present the first measurements of opticalelectrical-optical conversion latency in a hybridly-integrated optoelectronic/silicon complementary metal-oxide-semiconductor (CMOS) chip designed for optical interconnection. Using an optical pump-probe technique, we perform precise measurements with picosecond resolution that closely match our simulations. Our findings suggest that optical interconnects have the potential to provide equal or lower latency than on-chip global wires in future CMOS microelect… Show more

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Cited by 13 publications
(6 citation statements)
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“…At each hop, every packet is converted from optics to electronics and then back to optics (O-E-O) and switching at the ToR. Pure O-E-O conversion can be done in sub-nanoseconds [21]. Note that at any port, the aggregate transit, incoming and outgoing traffic cannot exceed the port's capacity in each direction.…”
Section: Building Blocksmentioning
confidence: 99%
“…At each hop, every packet is converted from optics to electronics and then back to optics (O-E-O) and switching at the ToR. Pure O-E-O conversion can be done in sub-nanoseconds [21]. Note that at any port, the aggregate transit, incoming and outgoing traffic cannot exceed the port's capacity in each direction.…”
Section: Building Blocksmentioning
confidence: 99%
“…It is similar to the chips described earlier, but fabricated in a 0.25-m CMOS technology. The measurement was designed to determine the electrical latency of a circuit that consists of a transmitter driver and transimpedance receiver [28]. The circuit was chosen because its delay, together with the delay of optical signal propagation, accounts for the entire latency of an optical link.…”
Section: B Measurements With High Temporal Precisionmentioning
confidence: 99%
“…Node "tune" was kept at 0 V for latency measurement. An optical pump-probe setup was used for measurement, which is described in detail in [26]. Short pulses ( 150 fs) generated from a Ti : sapphire modelocked laser at 850 nm were used for the pump and probe beams at 80 MHz (limited by the repetition rate of the laser).…”
Section: Measurement Of the Transimpedance Receiver Latencymentioning
confidence: 99%