Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer

Shi, Yuting; Wang, Zhechao; Campenhout, Joris Van; Pantouvaki, Marianna; Guo, Weiming; Kunert, Bernardette; Thourhout, Dries Van

doi:10.1364/optica.4.001468

Cited by 97 publications

(57 citation statements)

References 23 publications

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“…In this way, the active device region of the NRs is clearly separated from the defective crystal region inside the trench, which is an important characteristic to achieve a long device lifetime. The first device demonstration of an optically pumped distributed feedback laser based on GaAs NRs waveguides emphasizes the application potential as well as compatibility of this integration concept with silicon photonics [30,47]. A SEM image of such an array of nano-ridge lasers is show in Figure 2a.…”

Section: Resultsmentioning

confidence: 99%

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Baryshnikova

Mols

Ishii³

et al. 2020

Crystals

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Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

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Section: Resultsmentioning

confidence: 99%

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Baryshnikova

Mols

Ishii³

et al. 2020

Crystals

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“…Compared with the narrow-band and variation-intolerant directional coupler, the linearly tapered coupler already exhibits a broadband and more fabrication tolerant performance. Nevertheless, with a length of 310 µm its footprint is large compared to the length of a typical III-V integrated laser or amplifier (100 − 600 µm) and in particular with respect to our earlier demonstrated nano-ridge laser, which was only ∼ 100µm long [20]. In addition insufficient decoupling at the beginning and end of the linearly tapered coupler decreases the maximum coupling efficiency and introduces extra coupling to unwanted modes, which could impact the laser performance.…”

Section: Advanced Adiabatic Couplermentioning

confidence: 85%

“…As discussed in [20] the nano-ridge laser operates in the lowest order TE-like mode of the device. Therefore the coupler design should maximize the coupling efficiency η C from this mode to the TE-like fundamental mode of the Si WG.…”

Section: Design Methodology and Simulation Toolsmentioning

confidence: 99%

“…micrometers, complicating the coupling process. Alternatively, several groups have demonstrated that it is possible to suppress defect formation by growing the III-V materials within a narrow opening defined in a SiO 2 mask deposited on the silicon substrate [11,15,16,19,20]. In this case the extent of the III-V structure can be considerably smaller and coupling to a waveguide directly defined in the substrate becomes feasible.…”

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confidence: 99%

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Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform

Shi¹,

Kunert²,

Koninck³

et al. 2019

Opt. Express

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While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 µm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform. micrometers, complicating the coupling process. Alternatively, several groups have demonstrated that it is possible to suppress defect formation by growing the III-V materials within a narrow opening defined in a SiO 2 mask deposited on the silicon substrate [11,15,16,19,20]. In this case the extent of the III-V structure can be considerably smaller and coupling to a waveguide directly defined in the substrate becomes feasible. E.g. L. Megalini et al. from UCSB demonstrated the growth of an InGaAsP MQW structure on a V-groove-patterned SOI substrate with its QWs ∼ 500 nm away from the Si layer [16]. Y. Han et al. recently demonstrated a nanolaser array emitting at telecom wavelengths grown on SOI, with InGaAs QWs ∼ 300 nm separated from the Si layer [15], while M. Wang et al have shown the growth of InGaAs/InP nanowires on an SOI substrate with the QWs ∼ 500 nm away from the Si layer [19]. Z. Wang et al. demonstrated single-mode lasing of ∼ 500 nm high InP nanowires grown on a Si substrate [11]. Also our previously demonstrated nano-ridge laser [20] (see Fig. 1(a)) with the active layer ∼ 600 nm above the Si substrates fits this scheme. Therefore, in this paper we develop a method to design couplers that allow to integrate this type of sub-micrometer scale lasers with silicon waveguides defined in the same substrate. A simple butt-coupling approach whereby the waveguide is placed in line with the laser cavity is thereby not desired as the selective area growth process often results in irregularly shaped facets as shown in Fig. 1...

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“…To attain laser operation using III-V nano-ridges grown by ART, the active gain material should be carefully designed to minimize the influence of crystalline defects, and the optical modes should be well confined inside the III-V gain material. Three methods have been developed to minimize light leakage into the underlying Si substrates; they include selective etching away of the underlying silicon to obtain suspended III-V nano-ridges in the air [23], growth of large III-V ridge structures out of narrow trenches [24], and direct growth of the III-V nano-ridges on silicon-oninsulator (SOI) wafers [25]. While strong on-chip mode confinement inside the III-V nano-ridges has been demonstrated, the active gain material has yet been carefully designed to sustain room-temperature lasing at the telecom bands [26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands

Han

et al. 2018

Optica

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Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a SiO 2 ∕Si substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates.

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Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer

Cited by 97 publications

References 23 publications

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform

Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands

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