Optical receivers for lightwave communication systems

Brain, M.C.; Lee, Tien-Pei

doi:10.1109/t-ed.1985.22399

Cited by 8 publications

(4 citation statements)

References 87 publications

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“…The refraction index f n of the film f a s n n n = ⋅ [1] where a n and s n are refractive indices of air and Silicon wafer as substrate, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Optical Properties for Antireflection Coating of TiAlN Thin Films for Semiconductor Photo Detectors

Razeghi

Hantehzadeh

2011

ECS Trans.

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Titanium aluminum nitride thin film by DC magnetron sputtering was deposited on Si substrate. The thickness variation of titanium aluminum nitride for different Nitrogen and Argon gas composition at different wavelength in the range of 200 to 2500 nm is investigated using reflection spectroscopy. The morphology of titanium aluminum nitride films is characterized using atomic force microscopy AFM. Experimental results show that increasing the nitrogen gas in the mixture makes the film thicker and less reflective.

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“…The refraction index f n of the film f a s n n n = ⋅ [1] where a n and s n are refractive indices of air and Silicon wafer as substrate, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Semiconductor photo detectors are used in a wide variety of applications from simple pin detectors to more sophisticated avalanche photo detectors used in wide bandwidth communications (1)(2)(3).…”

Section: Introductionmentioning

confidence: 99%

Optical Properties for Antireflection Coating of TiAlN Thin Films for Semiconductor Photo Detectors

Razeghi

Hantehzadeh

2011

ECS Trans.

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“…To solve this problem, an optical opening is made at the bottom of the device; in this case, the photodiode is back-illuminated. PIN photodiodes are usually integrated with high-electron mobility transistors (HEMTs) or heterojunction bipolar transistors (HBTs) to form optoelectronic integrated circuits (OEICs) [1,2,3,4,5,6]. These are normally fabricated with the InP/InGaAsIlnMAs or InPIEnGaAs/ InGaAsP material systems because of their potential for high speed, high reliability and low manufacturing costs.…”

Section: Photodiodes Without Internal Gainmentioning

confidence: 99%

<title>Photodetectors for fiber optic communication systems</title>

1999

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This paper presents an brief overview of some of the common high-speed and high-sensitivity photodetectors. These devices are the key components in long-haul, high bit-rate fiber optic communication systems. In this paper, while we describe several types of photodetectors, we concentrate on avalanche photodiodes since they are the current preferred candidates for high bit-rate long-haul fiber optic communication systems. We describe and compare some analytical and stochastic modeling results with experimental data and conclude with a discussion of some state-of-the-art results on photodetectors.

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“…At higher frequency, the PIN followed by a field effect transistor amplifier (PIN FET) is considered a better choice. The case has been made for the utility of PIN FET combinations over avalanche photodiodes in these systems [3].…”

mentioning

confidence: 99%

Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes

Tabor¹

2000

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Optical receivers for lightwave communication systems

Cited by 8 publications

References 87 publications

Optical Properties for Antireflection Coating of TiAlN Thin Films for Semiconductor Photo Detectors

Optical Properties for Antireflection Coating of TiAlN Thin Films for Semiconductor Photo Detectors

<title>Photodetectors for fiber optic communication systems</title>

Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes

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