Optical Reflection Studies of Damage in Ion Implanted Silicon

McGill, T. C.; Kurtin, Stephen; Shifrin, G. A.

doi:10.1063/1.1658329

Cited by 58 publications

(6 citation statements)

References 9 publications

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“…The above effect of chemical treatment on the R(E) spectrum of c-Si resembles damping of a reflectivity coefficient due to radiation damage of a subsurface region produced by ion implantation [2][3][4][5][6][7].…”

Section: Results and Conclusionmentioning

confidence: 99%

“…1). The first one refers to the threshold energy for direct interband transitions in the X point of the BriHouin zone (X4 -X i ) and was found earlier to be specially sensitive to the lattice disorder [2][3][4]. The E2 peak corresponds to the L3 -L3 transitions [1,5].…”

Section: Results and Conclusionmentioning

confidence: 99%

“…1) typical of single crystalline Si (e.g. [1,2]). The latter spectrum (denoted by 3) includes two characteristic peaks at Ei = 4.51 eV and E2 = 5.55 eV (denoted by X and L, respectively - Fig.…”

Section: Results and Conclusionmentioning

confidence: 99%

“…Due to the above factors, for a case of Si the OR technique was also successfully applied for investigating the influence of particle irradiation on a crystalline structure [2][3][4][5][6][7][8]. Nevertheless (except for [9]), there is a lack of literature reports concerning the effect of Si surface preparation (specially chemical treatment) on its reflectivity spectum.…”

Section: Introductionmentioning

confidence: 99%

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X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching

1994

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Complementary X-ray photoelectron spectroscopy and optical reflectivity studies of crystalline Si(111) surfaces prepared by two different wet chemical etching processes were performed. These included aqueous HF solution etch or diluted CP-4 bath. Optical reflectivity spectra of Si surfaces, measured in the range 3.7-11 eV, were found strongly dependent on the applied etching process. Analysis of the core level X-ray photoelectron spectroscopy data has shown similarity of the surface structure, irrespectively of the etching procedure. Finally, comparison of optical reflectivity and valence 'band X-ray photoelectron spectra revealed a qualitative correlation between them indicating dominant influence of the bulk (here, the subsurface region containing polishing-induced defects) in the case studied. This paper is the first one which presents correlations between optical reflectivity and X-ray photoelectron spectroscopy data for Si and thus illustrates a bulk sensitivity of both techniques considered.

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Section: Results and Conclusionmentioning

confidence: 99%

Section: Results and Conclusionmentioning

confidence: 99%

Section: Results and Conclusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching

1994

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“…Rapid surface m e l t i n g and subsequent l i q u i d phast e p i t a x i a l regrowth i n nanosecond pulse annealing make i t possible t o dope s i l i c o n w i t h e l e c t r i c a l l y a c t i v e i m p u r i t i e s we1 1 above the thermal equi 1 i b r i u m sol i d solub i l i t y l i m i t (2), and t o completely anneal implanted regions w i t h o u t any macroscop i c a l l y extented defects, such as d i s l o c a t i o n s , stacking facets o r p r e c i p i t a t i o n s ( 3 ) . Three techniques are used t o analyze e l e c t r i c a l and s t r u c t u r a l p r o p e r t i e s o f l a s e rannealed damage : e l e c t r o n microscopy, He+ backscattering (3) and o p t i c a spectroscopy (4,5) mainly i n t h e UV and v i s i b l e range. Indeed, f o r photon energies smaller than Eo, t h a t i s f o r edge absorption, t h e semi-conductor i s more o r l e s s transparent ( f r e e absorption); f o r energies l a r g e r than Eo, i t i s opaque (band t o band absorption).…”

Section: Introductionmentioning

confidence: 99%

Study of Some Optical and Electrical Properties of Heavily Doped Silicon Layers

Slaoui¹,

Fogarassy²,

Müller³

et al. 1983

J. Phys. Colloques

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It is well known that the solubility of most dopants can be noticeably increased in silicon by pulsed laser annealing of the implanted layers. Here, we have investigated the evolution of some optical and electrical properties of such heavily doped layers as a function of implanted dose, trying to separate effects due to the high doping from those resulting from defects or precipitates. P-type silicon wafers have been implanted with 80 KeV arsenic ions at doses of up to 1017 cm-2 and annealed by a pulsed ruby and YAG laser, giving pulses of 20 and 100 ns duration, respectively and depositing energies up to 2.5 J.cm-2. U.V. and visible light (250 and 500 nm) reflectance, as well as ellipsometry (632.8 nm) measurements have been performed as well as dark I - V and C - V characteristics. These investigations indicate that by increasing the implanted dose, the doping level first increases until near surface defects and precipitates modify the optical as well as the electrical properties of the heavily doped layers. The generation of these defects has been followed by RBS in random and channelling conditions

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Optical Sensors

2023

Solid‐State Sensors

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Optical Reflection Studies of Damage in Ion Implanted Silicon

Cited by 58 publications

References 9 publications

X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching

X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching

Study of Some Optical and Electrical Properties of Heavily Doped Silicon Layers

Optical Sensors

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