Optical response of tin nitride thin films prepared by halide chemical vapor deposition under atmospheric pressure

Abstract

Optical response of tin nitride (SnN x ) films, which were deposited onto quartz substrates by means of atmospheric pressure, halide chemical vapor deposition (AP-HCVD), were examined by pulsed irradiation of a YAG laser (532 nm). It was observed that the transmittance of a light of a He-Ne laser (633 nm) through the SnN x film decreases after the film is irradiated with a YAG laser. The atomic force microscopy (AFM) micrograph observation confirmed that spot-like humps appeared on the SnN x film surface in the regions spotted by the YAG laser. This phenomenon was explained in terms of the laser-assisted thermal decomposition of SnN x to ␤-tin.

Evaluation of nanocrystalline Sn3N4derived from ammonolysis of Sn(NEt2)4as a negative electrode material for Li-ion and Na-ion batteries

“…9 At around the same time as Maya's bulk synthesis, Gordon et al produced crystalline Sn 3 N 4 thin lms by chemical vapour deposition (CVD) from Sn(NMe 2 ) 4 and ammonia, 12 and various other thin lm preparation routes have been examined since. [13][14][15] Higher temperature synthesis was achieved by Shemkunas et al using a metathesis reaction between SnI 4 and Li 3 N at elevated pressure, 16 although washing with HCl (aq) was necessary to remove by-produced tin metal.…”

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

“…Numerous methods to synthesize metal thin films are known such as atmospheric pressure chemical vapor deposition (CVD) [1,2,6,9], plasmaenhanced CVD [10], magnetron sputtering [11,12], reactive sputtering [13,14], and reactive radio frequency (RF) sputtering [3,5,15,16]. Among them, reactive RF magnetron sputtering is commonly used to obtain uniform thin films.…”

Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride

“…[8] Thespinel crystal structure was then determined by Scotti in 1999 at ambient conditions. [9] Preparation by high pressure metathesis reactions, [10] au rea-gel route, [11] and various thinfilm methods [12][13][14][15] have also been described. Sn 3 N 4 has atunable band gap,and is composed of only Earth-abundant elements,i dentifying it as af avourable candidate for optoelectronic technologies.…”