The characteristics of a highly sensitive express bench for nonlinear optical diagnosis of crystalline structures such as sphalerite by generation of the second harmonica are presented. The analysis of the possibilities of quantitative and qualitative characterization of the features of the crystalline parameters of the layers of heteroepitaxial structures CdxHg1-xTe on substrates from GaAs with orientation (013) was carried out. The results were obtained by deviations of orientation in layers from the orientation of the substrate, which arose during the epitaxy, to determine the existence of stresses. The high sensitivity of the bench revealed the presence/absence of micro-particles with a disordered crystalline structure. Experimental results of reversible modification of the "in situ" crystalline state of CdxHg1-xTe structures with short-term local radiation exposure of high power laser radiation are given. New experimental data have been presented showing that the components of the nonlineaic susceptibility tensor chixyz(ω) of the crystalline structure of CdxHg1-xTe depend on composition and are an order of magnitude larger than similar components of tensor in CdTe and GaAs. Keywords: sphalerite crystals, second harmonica, azimuth angular dependence, tensor of nonlinear susceptibility, tensions, microparticle, radiation heating, heterostructures CdxHg1-xTe.