Optical simulation and investigation of different coating methods CdS&amp;TiO2 for buffer layer in CIGS solar cell efficiency

Ghorashi, Seyed Mohammad Bagher; Karimi, P.; Jahantigh, Farhad; Esmaeili-Zare, Mahdiyeh

doi:10.1007/s00339-022-05508-x

Cited by 5 publications

(2 citation statements)

References 60 publications

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“…There was an abruptly decrease in the photocell's performance. A large defect concentration decreases charge carrier lifetime [33] proportionally as:…”

Section: Fig 11 Influence Of Bulk Defect Density On Short Circuit Cur...mentioning

confidence: 99%

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Orori

2023

JOBARI

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In CIGS-based thin-films, bulk defects are believed to represent disturbances either in a regular, periodical arrangement within the atoms or within the crystalline media which influence sheet resistivity. In this study, first a resistivity measurements were carried out on CIGS thin films using the Van Der Pauw technique. Then, a comparison between two Van Der Pauw four-point measurement configurations (aligned and square) were done which showed that the square configuration was the most appropriate configuration that can be recommended to measure thin film sheet resistance of CIGS films. Finally, a numerical simulation using SCAPS-1D software was used to study the influence of bulk defect density in a CIGS films as an absorber layer in a model photocell. Using the simulated data, three operating zones for the model photocell were identified depending based on the concentration of its bulk defect density. The influence of bulk defects on thickness, band gap and doping were then analyzed. It was revealed that when the bulk defect density was less than 5×1013 cm-3 for an absorber of thickness in the order of over 3 μm, a band gap between 1.3 eV-1.4 eV and acceptor density of 1016 cm-3were the optimal operating conditions for the model photocell. It was concluded that the CICS layer used as an absorber can be improved if its bulk defect density is tuned to optimal levels.

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“…There was an abruptly decrease in the photocell's performance. A large defect concentration decreases charge carrier lifetime [33] proportionally as:…”

Section: Fig 11 Influence Of Bulk Defect Density On Short Circuit Cur...mentioning

confidence: 99%

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Orori

2023

JOBARI

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“…Conventional energy resources such as petroleum and fossil fuels will deplete over time. These sources are harmful to the environment [1]. Research works on solar energy harvesting are increasing in order to resolve these problems and fulfill the demands of energy consumption [2,3].…”

Section: Introductionmentioning

confidence: 99%

Efficiency improvement of Cu(In_(1−x)Ga _x )Se₂ solar cell using copper barium tin sulfide as back surface field layer and bandgap grading technique

Patel,

Mishra,

Soni

2023

Semicond. Sci. Technol.

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This work proposes the simulation of graded C u I n 1 − x G a x S e 2 –based solar cell with copper barium tin sulfide (CBTS) compounds as a back surface field (BSF) layer using the SCAPS-1D software. The CBTS BSF layer reduces the charge carrier losses on the back contact side and creates an extra BSF that helps in extracting holes toward the back contact. To utilize the maximum spectrum absorption range, three different grading configurations were analyzed by varying the stoichiometry of C u I n 1 − x G a x S e 2 . This grading technique significantly improves the device performance such as open circuit voltage (V oc), short circuit current density (J sc), fill factor (FF), and power conversion efficiency by changing the Ga content in the CIGS material. Furthermore, the impact of interface defect recombination velocity at the WSSe/graded-CIGS interface, acceptor density, and bulk defect in the CIGS layer on the device’s performance have been analyzed. The insertion of CBTS as a BSF layer and the bandgap grading technique yield a maximum efficiency of 31.08% for the proposed solar cell. These results will be helpful in the fabrication of highly efficient bandgap graded-CIGS solar cells.

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Silver (Ag) substitution in Cu(In,Ga)Se2 solar cell: insights into current challenges and future prospects

Gu,

Zhou,

Chen

et al. 2024

Appl. Phys. A

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Optical simulation and investigation of different coating methods CdS&TiO2 for buffer layer in CIGS solar cell efficiency

Cited by 5 publications

References 60 publications

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Efficiency improvement of Cu(In_(1−x)Ga _x )Se₂ solar cell using copper barium tin sulfide as back surface field layer and bandgap grading technique

Silver (Ag) substitution in Cu(In,Ga)Se2 solar cell: insights into current challenges and future prospects

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Optical simulation and investigation of different coating methods CdS&TiO2 for buffer layer in CIGS solar cell efficiency

Cited by 5 publications

References 60 publications

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Efficiency improvement of Cu(In(1−x)Ga x )Se2 solar cell using copper barium tin sulfide as back surface field layer and bandgap grading technique

Silver (Ag) substitution in Cu(In,Ga)Se2 solar cell: insights into current challenges and future prospects

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Efficiency improvement of Cu(In_(1−x)Ga _x )Se₂ solar cell using copper barium tin sulfide as back surface field layer and bandgap grading technique