Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation*

Abstract

Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H 2 + implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 °C to 1100 °C. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

“…Raman spectroscopy and transmission electron microscopy were carried out to study the lattice damage induced by H 2 + and He + implantation. Raman spectroscopy is a good method to avoid sample destruction during characterization which has been widely used to investigate ions implanted in SiC via the decrease in Raman scattering intensity, frequency shifting and broadening of the phonon Raman bands [23][24][25]. Confocal Raman scattering spectra were acquired at room temperature with a French HR-800 spectrometer in backscattering geometry with a 532 nm excitation laser radiation line.…”