1966
DOI: 10.1016/0022-3697(66)90107-7
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Optical studies in x-irradiated high purity sodium silicate glasses

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Cited by 96 publications
(49 citation statements)
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“…2 that the pre-existing L band is diminished in intensity during irradiation. The induced absorption band at 1.82 eV (FWHM $0.6 eV), known for sodium silicate glasses as the E À 1;2 centers [36], was induced together with broad complicated band at 5.6-5.7 eV containing a sub-band at 4.7 eV. The band at 1.82 eV decays during 1 h, but induced bands at 4.7 and 5.7 eV remain stable.…”
Section: Radiation Processes In Silica Doped With Namentioning
confidence: 97%
See 1 more Smart Citation
“…2 that the pre-existing L band is diminished in intensity during irradiation. The induced absorption band at 1.82 eV (FWHM $0.6 eV), known for sodium silicate glasses as the E À 1;2 centers [36], was induced together with broad complicated band at 5.6-5.7 eV containing a sub-band at 4.7 eV. The band at 1.82 eV decays during 1 h, but induced bands at 4.7 and 5.7 eV remain stable.…”
Section: Radiation Processes In Silica Doped With Namentioning
confidence: 97%
“…In Fig. 2, the broad band at 6.8 eV (FWHM $1 eV) in the unirradiated sample is ascribed to the so-called L-center associated with the cluster Si-O À -Na + , as known for sodium silicate glasses [4,36,37]. So, it could be directly excited with ArF laser's photons.…”
Section: Radiation Processes In Silica Doped With Namentioning
confidence: 99%
“…Specifically, it is well known that E1 and H1 centers are present in alkali-silicate glasses with their binding energies dependent on temperature. 13) For example, binding energy of E1-like centers in potassiumsilicate glasses increases from ~1.49 eV at 77 K to 1.61 eV at 210 K. In this work, precursor silicate glass is rich potassium, and photon energy of excitation is 1.55 eV (800 nm). Thus, charge carriers trapped by the E1 or H1-like centers in the host glasses were excited by the illumination at low temperatures.…”
Section: Brightening and Darkening Of Photoluminescence From Pbs Qdsmentioning
confidence: 74%
“…As discussed in the structural analysis, many defects may be produced during ion implantation and high-temperature annealing. These defects may serve as trapped electron centers and can effectively affect optical absorption [14,15]. It is believed that ion-beam induced defects enhance the optical absorption.…”
Section: Structural Propertiesmentioning
confidence: 99%