optical studies of disorder and defects in amorphous GexSe1−X films as a function of composition

Kotkata, M. F.; Kandil, K.M.; Thèye, M. L.

doi:10.1016/0022-3093(93)91230-z

Cited by 20 publications

(8 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These values are in good agreement with those reported by Shirafuji [5]. In contrast, for a comparison with other authors, the variation of Tauc constant with the composition of Ge x Se 1-x almost decreases linearly [15,31] and is independent of the chemical composition of the chalcogenide semiconductor films [32]. Figure 6 shows that the observed change in the optical band gap (E g ) as a function of the composition, exhibits a maximum near the value of X=0.28.…”

Section: Further Investigation Have Been Done By Measuring the Ir Trasupporting

confidence: 92%

Structural Properties of GexSe1-x Thin Films Prepared by Semi-closed Space Technique

2000

Egyptian Journal of Solids

View full text Add to dashboard Cite

Bulk and thin film Ge x Se 1-x alloys have been prepared with 0.1≤X≤0.5. The bulk materials were obtained by quenching from the melt. They have been used as source materials to produce thin film samples using the thermal evaporation method (semi-closed space technique). The composition of the obtained films was checked against the bulk ones by X-ray fluorescence (XRF) technique. X-ray diffraction patterns of the obtained compositions revealed the presence of some crystalline inclusions in the amorphous matrix for some compositions. Glass transition temperature measurements showed a maximum in the range X=0.25 to 0.32 where the glass forming ability is optimum. Measurements of the temperature dependence of the steady state dark current as a function of the Ge content has been recorded during heating and cooling cycles. A compensation effect has been found and characterized with two compensation temperatures, during the cooling cycle. Optical transmission, (UV) and infrared (IR), measurements have been performed. Energy band gap, width of the band tail and the refractive index have been calculated. Results have been interpreted in terms of the structural behavior of the samples under investigation in view of the models presented in literatures.

show abstract

Section: Further Investigation Have Been Done By Measuring the Ir Trasupporting

confidence: 92%

Structural Properties of GexSe1-x Thin Films Prepared by Semi-closed Space Technique

2000

Egyptian Journal of Solids

View full text Add to dashboard Cite

show abstract

“…Specifically, the present results show a systematic variation. 4, and accordingly, this scattering model can also explain the marked attenuation of Kotkata et al 4 The other is an electronic effect. Note that the structures and impurity levels of these films are assumed to be similar, because the two films have been prepared by a single evaporation process, in which only the distances between an evaporating boat and silica substrates are arranged differently.…”

Section: A Pds Characteristicsmentioning

confidence: 71%

“…Figure 2 compares PDS spectra of a Se bulk sample ͑0.7 mm in thickness͒ and deposited films with thicknesses of 7 and 14 m. As references, the figure also includes three spectra; i.e., an absorption spectrum evaluated from transmission measurements for long ͑25 cm͒ high-purity samples by Vaško et al, 12 a photoacoustic spectrum obtained for evaporated films ͑ϳ20 m͒ by Ceaser et al, 13 and a PDS spectrum for evaporated films ͑ϳ1 m͒ by Kotkata et al 4 In the present PDS spectra, characteristics at ␣у10 3 cm Ϫ1 again arise from the signal saturation, 1 which should be neglected. Actually, the PDS data with sensitivity of ␣d Ͼ10 Ϫ5 have been obtained for a 1-mm-thick sample.…”

Section: A Pds Characteristicsmentioning

confidence: 99%

“…1 Actually, after the pioneering work by Jackson and Amer, 2 it has been frequently employed for investigations of small absorption in hydrogenated amorphous Si films and related materials. 4,5 Here we examine several chalcogenide glasses using PDS with the following two motivations. 4,5 Here we examine several chalcogenide glasses using PDS with the following two motivations.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photothermal deflection spectroscopy of chalcogenide glasses

Tanaka

Gotoh

Yoshida

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

Photothermal deflection spectroscopy has been applied to optical absorption measurements in As 2 S 3 , Se, and As-S glasses. The spectroscopic method is demonstrated to be suitable for evaluation of small absorption in thin samples, while its accuracy is affected by light scattering. For As 2 S 3 , as-evaporated films give higher residual absorption than those of the bulk. In the As-S system, As 2 S 3 shows the most prominent weak absorption tail, and As 17 S 83 exhibits a peculiar spectrum. The origins of these features are discussed.

show abstract

“…During the last decade, a number of papers were devoted to the investigations of photo-induced effects for glasses from the Ge-Se systems [6][7][8][9][10][11][12]. It is reported [13,14] that in contrast to As-based chalcogenides in which photo-darkening effect was observed, Ge-based chalcogenide glasses undergo photo-induced darkening and/or bleaching effect.…”

Section: Introductionmentioning

confidence: 99%

Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films

Csarnovics¹,

Latif²,

Nichol³

et al. 2015

JMSE-A

View full text Add to dashboard Cite

Photo-induced changes are investigated in thermally evaporated Ge x Se 1-x (x = 0.28, 0.33 and 0.40) films. Object of studies are fresh (as prepared), as well as annealed films. The studies indicated concentration dependence of the occurring effects for the studied compositions. Fast photo-darkening and slow photo-bleaching processes due to laser irradiation were detected in as-prepared films, while only photo-darkening effect was established for annealed samples. The origin of photo-darkening and photo-bleaching is explained based on the structural investigations carried out by Raman spectroscopy.

show abstract

optical studies of disorder and defects in amorphous GexSe1−X films as a function of composition

Cited by 20 publications

References 10 publications

Structural Properties of GexSe1-x Thin Films Prepared by Semi-closed Space Technique

Structural Properties of GexSe1-x Thin Films Prepared by Semi-closed Space Technique

Photothermal deflection spectroscopy of chalcogenide glasses

Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films

Contact Info

Product

Resources

About