GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaO x film atop an n-GaN layer roughened via KrF laser irradiation and a TiO 2 /SiO 2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaO x film, the proposed VLEDs with a chip size of 1 mm 2 show a typical increase in light output power by 68% at 350 mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaO x film by KrF laser irradiation. #